Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Urmita Sikder"'
Autor:
Urmita Sikder, Anisul Haque
Publikováno v:
IEEE Access, Vol 1, Pp 363-370 (2013)
The influences of the intermediate band (IB) filling, the absorption coefficient constants, and the IB position on the efficiency of a quantum dot intermediate band solar cell (QD-IBSC) are investigated considering the spatial variation of subbandgap
Externí odkaz:
https://doaj.org/article/3c6e4d0ab21c471e9dfc66026c46b1b1
Publikováno v:
IEEE Electron Device Letters. 44:136-139
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c18041fa34f8758e651de416bf5c149b
https://doi.org/10.1109/led.2022.3221701
https://doi.org/10.1109/led.2022.3221701
Autor:
Tsegereda K. Esatu, Hei Kam, Lars P. Tatum, Xiaoer Hu, Urmita Sikder, Sergio Almeida, Junqiao Wu, Tsu-Jae King Liu
Publikováno v:
2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aec9c3c1b61ab712423d7a793fdcba4f
https://doi.org/10.1109/mems49605.2023.10052428
https://doi.org/10.1109/mems49605.2023.10052428
Autor:
Kelsey Horace-Herron, Giulia Usai, Urmita Sikder, Vladimir Stojanovic, Tiehui Liu, Louis Hutin, Ting-Ta Yen
Publikováno v:
IEEE Transactions on Electron Devices. 68:6430-6436
Nanoelectromechanical (NEM) switches offer the advantages of zero off-state leakage current, abrupt switching characteristics, nonvolatile (NV) operation, and relatively low on-state resistance as compared with CMOS transistors predominantly used for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::142a1d8f425ad9707926b48c13c10927
https://doi.org/10.1109/ted.2021.3122404
https://doi.org/10.1109/ted.2021.3122404
Publikováno v:
IEEE Transactions on Electron Devices. 68:1471-1477
Design tradeoffs for vertically oriented nonvolatile (NV) nano-electro-mechanical (NEM) switches implemented using multiple interconnect layers in a 5-nm-generation CMOS back-end-of-line (BEOL) process are investigated via 3-D device simulation. Prog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11470c9c3278d607c9f19ca5b3697efb
https://doi.org/10.1109/ted.2021.3062251
https://doi.org/10.1109/ted.2021.3062251
Autor:
Benjamin Osoba, Tsegereda Kedir Esatu, Sergio F. Almeida, Xiaoer Hu, Zhixin Alice Ye, Urmita Sikder, Tiehui Liu
Publikováno v:
Journal of Microelectromechanical Systems. 29:1531-1536
Body-biased micro-electro-mechanical (MEM) relays previously have been demonstrated to be a promising alternative to transistors for ultra-low voltage digital logic applications. A basic requirement for reliable relay-based circuit operation is suita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02f993128c91622dd3d206c378723ed4
https://doi.org/10.1109/jmems.2020.3030886
https://doi.org/10.1109/jmems.2020.3030886
Publikováno v:
IEEE Electron Device Letters. 41:625-628
Non-volatile (NV) nano-electro-mechanical (NEM) switches are successfully implemented using multiple metallic layers in a standard 65 nm CMOS back-end-of-line (BEOL) process with no additional lithography steps. Non-volatile operation of a NEM switch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ac51e3a80145a201ff1e25fbffbbe63
https://doi.org/10.1109/led.2020.2974473
https://doi.org/10.1109/led.2020.2974473
Autor:
Urmita Sikder, Tsu-Jae King Liu
Publikováno v:
2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::027d679d907027b87c44edee9d1f3308
https://doi.org/10.1109/imfedk53601.2021.9637634
https://doi.org/10.1109/imfedk53601.2021.9637634
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Metallic interconnect layers in a standard 65 nm CMOS back-end-of-line (BEOL) process are leveraged to form vertically oriented non-volatile (NV) nano-electromechanical (NEM) switches for compact implementation of hybrid CMOS-NEM integrated circuits.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c9e6d9257d4b3c4ac196f2cd8ec21d3
https://doi.org/10.1109/iedm13553.2020.9372116
https://doi.org/10.1109/iedm13553.2020.9372116
Autor:
Mohammad Asif Zaman, Urmita Sikder
Publikováno v:
Optics & Laser Technology. 79:88-94
Multilayer antireflection coating (ARC) for photovoltaics is optimized using Differential Evolution (DE) algorithm. A general transfer-matrix based mathematical formulation is used for evaluating reflection spectra of the system. Exact and complete v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a308e4d54a7b3e3b282e902316be0a5a
https://doi.org/10.1016/j.optlastec.2015.11.011
https://doi.org/10.1016/j.optlastec.2015.11.011