Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Uritskii, A."'
Autor:
M. Z. Uritskii
Publikováno v:
Physics of the Solid State. 63:937-941
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Steel in Translation. 47:267-273
The edge deformation of cold-rolled electrical-steel sheet in finishing is studied, as well as the change in flatness of the sheet in rolling and heat treatment. The influence of these processes on the edge deformation is determined. The edge deforma
Publikováno v:
Steel in Translation. 47:165-171
The stages of structure formation during cold rolling are investigated in bcc (110)[001] single crystals of Fe–3% Si alloy, within the deformation zone. To obtain a visible deformation zone, the laboratory mill is abruptly stopped at the instant of
Publikováno v:
Izvestiya Visshikh Uchebnykh Zavedenii. Chernaya Metallurgiya = Izvestiya. Ferrous Metallurgy. 60:207-215
Publikováno v:
Steel in Translation. 44:723-726
In the hot rolling of ferritic steel, deformational texture (110)[001] is formed at the surface of the basic strip volume. It is dispersed when equiaxial recrystallizational grain structure appears. With transverse flow (near the edges) in hot rollin
Publikováno v:
Izvestiya Ferrous Metallurgy
Известия высших учебных заведений. Черная металлургия
Известия высших учебных заведений. Черная металлургия
Structure formation staging of a single crystal (110) [001] of the alloy with Fe – 3 % Si bcc was investigated directly in deformation zone during cold rolling. Laboratory rolling mill was abruptly stopped during the rolling of every sample to crea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______917::f0ff9a3572247eb2f08b19cd5742ae22
http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85026415338
http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85026415338
Publikováno v:
Russian Microelectronics. 29:417-422
Single-crystal silicon/noncrystalline ultrathin oxide multilayer structures were investigated. The oxide was formed by (100)Si thermal oxidation. An undoped polysilicon layer with an aluminum contact was used as a gate. The distribution of ionized el
Publikováno v:
Russian Microelectronics. 29:413-416
An approach to radically modifying gate dielectric by laterally gettering electroactive defects (centers) is suggested. Gettering of the ionized centers is accomplished through intentionally creating structure defects in the surface layers of the sid
Publikováno v:
Izvestiya Visshikh Uchebnykh Zavedenii. Chernaya Metallurgiya = Izvestiya. Ferrous Metallurgy. 57:42