Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Urdampilleta, M."'
Autor:
Bédécarrats, T., Paz, B. Cardoso, Diaz, B. Martinez, Niebojewski, H., Bertrand1, B., Rambal, N., Comboroure, C., Sarrazin, A., Boulard, F., Guyez, E., Hartmann, J. -M., Morand, Y., Magalhaes-Lucas, A., Nowak, E., Catapano, E., Cassé, M., Urdampilleta, M., Niquet, Y. -M., Gaillard, F., De Franceschi, S., Meunier, T., Vinet, M.
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2021, pp. 1-4
Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange intera
Externí odkaz:
http://arxiv.org/abs/2304.03721
Autor:
Piot, N., Brun, B., Schmitt, V., Zihlmann, S., Michal, V. P., Apra, A., Abadillo-Uriel, J. C., Jehl, X., Bertrand, B., Niebojewski, H., Hutin, L., Vinet, M., Urdampilleta, M., Meunier, T., Niquet, Y. -M., Maurand, R., De Franceschi, S.
Publikováno v:
Nature Nanotechnology 17, 1072-1077 (2022)
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to
Externí odkaz:
http://arxiv.org/abs/2201.08637
Autor:
Hutin, L., Bertrand, B., Chanrion, E., Bohuslavskyi, H., Ansaloni, F., Yang, T. -Y., Michniewicz, J., Niegemann, D. J., Spence, C., Lundberg, T., Chatterjee, A., Crippa, A., Li, J., Maurand, R., Jehl, X., Sanquer, M., Gonzalez-Zalba, M. F., Kuemmeth, F., Niquet, Y. -M., De Franceschi, S., Urdampilleta, M., Meunier, T., Vinet, M.
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM)
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based reado
Externí odkaz:
http://arxiv.org/abs/1912.10884
Autor:
Vinet, M., Hutin, L., Bertrand, B., Barraud, S., Hartmann, J. -M., Kim, Y. -J., Mazzocchi, V., Amisse, A., Bohuslavskyi, H., Bourdet, L., Crippa, A., Jehl, X., Maurand, R., Niquet, Y. -M., Sanquer, M., Venitucci, B., Jadot, B., Chanrion, E., Mortemousque, P. -A., Spence, C., Urdampilleta, M., De Franceschi, S., Meunier, T.
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM)
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the b
Externí odkaz:
http://arxiv.org/abs/1912.09807
Autor:
Hutin, L., Bourdet, L., Bertrand, B., Corna, A., Bohuslavskyi, H., Amisse, A., Crippa, A., Maurand, R., Barraud, S., Urdampilleta, M., Bäuerle, C., Meunier, T., Sanquer, M., Jehl, X., De Franceschi, S., Niquet, Y. -M., Vinet, M.
Publikováno v:
2018 IEEE Symposium on VLSI Technology
We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI
Externí odkaz:
http://arxiv.org/abs/1912.09806
Autor:
Crippa, A., Ezzouch, R., Aprá, A., Amisse, A., Houtin, L., Bertrand, B., Vinet, M., Urdampilleta, M., Meunier, T., Sanquer, M., Jehl, X., Maurand, R., De Franceschi, S.
Publikováno v:
Nature Communications 10, 2776 (2019)
Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of
Externí odkaz:
http://arxiv.org/abs/1811.04414
Autor:
Urdampilleta, M., Chatterjee, A., Lo, C. C., Kobayashi, T., Mansir, J., Barraud, S., Betz, A. C., Rogge, S., Gonzalez-Zalba, M. F., Morton, J. J. L.
Publikováno v:
Phys. Rev. X 5, 031024 (2015)
Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the m
Externí odkaz:
http://arxiv.org/abs/1503.01049
Autor:
Lo, C. C., Urdampilleta, M., Ross, P., Gonzalez-Zalba, M. F., Mansir, J., Lyon, S. A., Thewalt, M. L. W., Morton, J. J. L.
Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing. For elect
Externí odkaz:
http://arxiv.org/abs/1411.1324
Autor:
Pica, G., Wolfowicz, G., Urdampilleta, M., Thewalt, M. L. W., Riemann, H., Abrosimov, N. V., Becker, P., Pohl, H. -J., Morton, J. J. L., Bhatt, R. N., Lyon, S. A., Lovett, B. W.
Publikováno v:
Phys. Rev. B 90 195204 (2014)
We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions induced by a
Externí odkaz:
http://arxiv.org/abs/1408.4375
Autor:
Paz, B. Cardoso, El-Homsy, V., Niegemann, D. J., Klemt, B., Chanrion, E., Thiney, V., Jadot, B., Mortemousque, P. A., Bertrand, B., Bedecarrats, T., Niebojewski, H., Perruchot, F., De Franceschi, S., Vinet, M., Urdampilleta, M., Meunier, T.
Publikováno v:
ESSCIRC 2022-IEEE 48th European Solid State Circuits Conference (ESSCIRC)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::61d6f24843c48ac88b21739e488cc6e1
https://doi.org/10.1109/esscirc55480.2022.9911381
https://doi.org/10.1109/esscirc55480.2022.9911381
