Zobrazeno 1 - 10
of 214
pro vyhledávání: '"Urbaszek Bernhard"'
Autor:
Majorel Clément, Patoux Adelin, Estrada-Real Ana, Urbaszek Bernhard, Girard Christian, Arbouet Arnaud, Wiecha Peter R.
Publikováno v:
Nanophotonics, Vol 11, Iss 16, Pp 3663-3678 (2022)
The multipole expansion of a nano-photonic structure’s electromagnetic response is a versatile tool to interpret optical effects in nano-optics, but it only gives access to the modes that are excited by a specific illumination. In particular the st
Externí odkaz:
https://doaj.org/article/9a69abff2c414aa19877703faa759f8a
Autor:
Mondal, Priyanka, Markina, Daria I., Hopf, Lennard, Krelle, Lukas, Shradha, Sai, Klein, Julian, Glazov, Mikhail M., Gerber, Iann, Hagmann, Kevin, Klitzing, Regine v., Mosina, Kseniia, Sofer, Zdenek, Urbaszek, Bernhard
Semiconducting CrSBr is a layered A-type antiferromagnet, with individual layers antiferromagnetically coupled along the stacking direction. Due to its unique orthorhombic crystal structure, CrSBr exhibits highly anisotropic mechanical and optoelectr
Externí odkaz:
http://arxiv.org/abs/2410.22164
Autor:
Sushko Andrey, De Greve Kristiaan, Phillips Madeleine, Urbaszek Bernhard, Joe Andrew Y., Watanabe Kenji, Taniguchi Takashi, Efros Alexander L., Hellberg C. Stephen, Park Hongkun, Kim Philip, Lukin Mikhail D.
Publikováno v:
Nanophotonics, Vol 10, Iss 1, Pp 105-113 (2020)
Transition metal dichalcogenide (TMD) semiconductor heterostructures are actively explored as a new platform for quantum optoelectronic systems. Most state of the art devices make use of insulating hexagonal boron nitride (hBN) that acts as a wide-ba
Externí odkaz:
https://doaj.org/article/449a3067822d4d4eaf041fd6022194f1
In the last decade atomically thin 2D materials have emerged as a perfect platform for studying and tuning light-matter interaction and electronic properties in nanostructures. The optoelectronic properties in layered materials such as transition-met
Externí odkaz:
http://arxiv.org/abs/2405.04222
Autor:
Lamsaadi, Hassan, Beret, Dorian, Paradisanos, Ioannis, Renucci, Pierre, Lagarde, Delphine, Marie, Xavier, Urbaszek, Bernhard, Gan, Ziyang, George, Antony, Watanabe, Kenji, Taniguchi, Takashi, Turchanin, Andrey, Lombez, Laurent, Combe, Nicolas, Paillard, Vincent, Poumirol, Jean-Marie
Publikováno v:
Nature Communications volume 14, Article number: 5881 (2023)
Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust and mobile
Externí odkaz:
http://arxiv.org/abs/2306.13352
Autor:
Rosati, Roberto, Paradisanos, Ioannis, Huang, Libai, Gan, Ziyang, George, Antony, Watanabe, Kenji, Taniguchi, Takashi, Lombez, Laurent, Renucci, Pierre, Turchanin, Andrey, Urbaszek, Bernhard, Malic, Ermin
The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be c
Externí odkaz:
http://arxiv.org/abs/2302.02617
Autor:
Feng, Shun, Campbell, Aidan, Brotons-Gisbert, Mauro, Andres-Penares, Daniel, Baek, Hyeonjun, Taniguchi, Takashi, Watanabe, Kenji, Urbaszek, Bernhard, Gerber, Iann C., Gerardot, Brian D.
Publikováno v:
Nat. Commun. 15, 4377 (2024)
The fundamental properties of an exciton are determined by the spin, valley, energy, and spatial wavefunctions of the Coulomb bound electron and hole. In van der Waals materials, these attributes can be widely engineered through layer stacking config
Externí odkaz:
http://arxiv.org/abs/2212.14338
Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors
Autor:
Estrada-Real, Ana, Paradisanos, Ioannis, Wiecha, Peter R., Poumirol, Jean-Marie, Cuche, Aurelien, Agez, Gonzague, Lagarde, Delphine, Marie, Xavier, Larrey, Vincent, Müller, Jonas, Larrieu, Guilhem, Paillard, Vincent, Urbaszek, Bernhard
Publikováno v:
Communication Physics 6, 102 (2023)
Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically active materials such as transition-metal dichalcogenide (TMD) monolayer
Externí odkaz:
http://arxiv.org/abs/2210.14058
Publikováno v:
Photonics and Nanostructures - Fundamentals and Applications 52, 101066 (2022)
Deep learning is a promising, ultra-fast approach for inverse design in nano-optics, but despite fast advancement of the field, the computational cost of dataset generation, as well as of the training procedure itself remains a major bottleneck. This
Externí odkaz:
http://arxiv.org/abs/2207.03431
Autor:
Gan, Ziyang, Paradisanos, Ioannis, Estrada-Real, Ana, Picker, Julian, Najafidehaghani, Emad, Davies, Francis, Neumann, Christof, Robert, Cedric, Wiecha, Peter, Watanabe, Kenji, Taniguchi, Takashi, Marie, Xavier, Krasheninnikov, Arkady V., Urbaszek, Bernhard, George, Antony, Turchanin, Andrey
We report one-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these two-dim
Externí odkaz:
http://arxiv.org/abs/2205.04751