Zobrazeno 1 - 10
of 539
pro vyhledávání: '"Urbaszek B"'
Autor:
Aristegui, R., Lefebvre, P., Brimont, C., Guillet, T., Vladimirova, M., Paradisanos, I., Robert, C., Marie, X., Urbaszek, B., Chenot, S., Cordier, Y., Damilano, B.
Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. This electric field, and thus exciton energy, can be reduced by deposit
Externí odkaz:
http://arxiv.org/abs/2306.04404
Autor:
Beret, D., Ren, L., Robert, C., Foussat, L., Renucci, P., Lagarde, D., Balocchi, A., Amand, T., Urbaszek, B., Watanabe, K., Taniguchi, T., Marie, X., Lombez, L.
We investigate the diffusion process of negatively charged excitons (trions) in WSe2 transition metal dichalcogenide monolayer. We measure time-resolved photoluminescence spatial profiles of these excitonic complexes which exhibit a non-linear diffus
Externí odkaz:
http://arxiv.org/abs/2208.00734
Autor:
Tornatzky, H., Robert, C., Renucci, P., Han, B., Blon, T., Lassagne, B., Ballon, G., Lu, Y., Watanabe, K., Taniguchi, T., Urbaszek, B., Lopes, J. M. J., Marie, X.
We present magneto-photoluminescence measurements in a hybrid 2D semiconductor/ferromagnetic structure consisting of MoSe2/hBN/Ni. When the Nickel layer is magnetized, we observe circularly polarized photoluminescence of the trion peak in MoSe2 monol
Externí odkaz:
http://arxiv.org/abs/2110.13007
Publikováno v:
Phys. Rev. B 103, 085302 (2021)
The exciton valley dynamics in van der Waals heterostructures with transition metal dichalcogenides monolayers is driven by the long-range exchange interaction between the electron and the hole in the exciton. It couples the states active in the oppo
Externí odkaz:
http://arxiv.org/abs/2010.01352
Autor:
Robert, C., Han, B., Kapuscinski, P., Delhomme, A., Faugeras, C., Amand, T., Molas, M. R., Bartos, M., Watanabe, K., Taniguchi, T., Urbaszek, B., Potemski, M., Marie, X.
Excitons with binding energies of a few hundreds of meV control the optical properties of transition metal dichalcogenide monolayers. Knowledge of the fine structure of these excitons is therefore essential to understand the optoelectronic properties
Externí odkaz:
http://arxiv.org/abs/2002.03877
Autor:
Goryca, M., Li, J., Stier, A. V., Taniguchi, T., Watanabe, K., Courtade, E., Shree, S., Robert, C., Urbaszek, B., Marie, X., Crooker, S. A.
Publikováno v:
Nature Communications 10, 4172 (2019)
In semiconductor physics, many essential optoelectronic material parameters can be experimentally revealed via optical spectroscopy in sufficiently large magnetic fields. For monolayer transition-metal dichalcogenide semiconductors, this field scale
Externí odkaz:
http://arxiv.org/abs/1904.03238
Publikováno v:
Phys. Rev. B 100, 041301 (2019)
We study theoretically intervalley coupling in transition-metal dichalcogenide monolayers due to electron interaction with short-wavelength phonons. We demonstrate that this intervalley polaron coupling results in (i) a renormalization of the conduct
Externí odkaz:
http://arxiv.org/abs/1904.02674
Autor:
Fang, H. H., Han, B., Robert, C., Semina, M. A., Lagarde, D., Courtade, E., Taniguchi, T., Watanabe, K., Amand, T., Urbaszek, B., Glazov, M. M., Marie, X.
Publikováno v:
Phys. Rev. Lett. 123, 067401 (2019)
Optical properties of atomically thin transition metal dichalcogenides are controlled by robust excitons characterized by a very large oscillator strength. Encapsulation of monolayers such as MoSe$_2$ in hexagonal boron nitride (hBN) yields narrow op
Externí odkaz:
http://arxiv.org/abs/1902.00670
Autor:
Han, B., Robert, C., Courtade, E., Manca, M., Shree, S., Amand, T., Renucci, P., Taniguchi, T., Watanabe, K., Marie, X., Golub, L. E., Glazov, M. M., Urbaszek, B.
Publikováno v:
Phys. Rev. X 8, 031073 (2018)
Transitions metal dichalcogenides (TMDs) are direct semiconductors in the atomic monolayer (ML) limit with fascinating optical and spin-valley properties. The strong optical absorption of up to 20 % for a single ML is governed by excitons, electron-h
Externí odkaz:
http://arxiv.org/abs/1805.04440
Autor:
Courtade, E., Han, B., Nakhaie, S., Robert, C., Marie, X., Renucci, P., Taniguchi, T., Watanabe, K., Geelhaar, L., Lopes, J. M. J., Urbaszek, B.
Publikováno v:
Appl. Phys. Lett. 113, 032106 (2018)
The strong light-matter interaction in transition Metal dichalcogenides (TMDs) monolayers (MLs) is governed by robust excitons. Important progress has been made to control the dielectric environment surrounding the MLs, especially through hexagonal b
Externí odkaz:
http://arxiv.org/abs/1804.06623