Zobrazeno 1 - 10
of 85
pro vyhledávání: '"Urban Forsberg"'
Autor:
Jing-Jia Huang, Christian Militzer, Charles A. Wijayawardhana, Urban Forsberg, Henrik Pedersen
Publikováno v:
Journal of Vacuum Science & Technology A. 41
In this work, silicon carbide coatings (SiC) were successfully grown by pulsed chemical vapor deposition (CVD). The precursors silicon tetrachloride (SiCl4) and ethylene (C2H4) were not supplied in a continuous flow, but were pulsed alternately into
Publikováno v:
Dalton Transactions. 51:4712-4719
Indium oxide (In2O3) is an important transparent conducting material widely used in optoelectronic applications. Herein, we study the deposition of In2O3 by thermal atomic layer deposition (ALD) using our recently reported indium(iii) triazenide prec
SiC multilayer coatings were deposited via thermal chemical vapor deposition (CVD) using silicon tetrachloride (SiCl4) and various hydrocarbons under identical growth conditions, i.e. at 1100 ℃ and 10 kPa. The coatings consisted of layers whose pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cf1f88e259224e2bd6482ba76d39eb8
https://doi.org/10.26434/chemrxiv-2022-c0md8
https://doi.org/10.26434/chemrxiv-2022-c0md8
Publikováno v:
Dalton transactions (Cambridge, England : 2003). 51(12)
Indium oxide (In
Autor:
Jing-Jia Huang, Christian Militzer, Charles Wijayawardhana, Urban Forsberg, Lars Ojamäe, Henrik Pedersen
Highly -oriented 3C-SiC coatings with distinct surface morphology consisting of hexagonally shaped pyramidal crystals were prepared by chemical vapor deposition (CVD) using silicon tetrachloride (SiCl4) and toluene (C7H8) at T ≤ 1250 ℃ and p = 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18e7aa4d4307561e1da94eed311e1b07
https://doi.org/10.26434/chemrxiv-2022-0z38x
https://doi.org/10.26434/chemrxiv-2022-0z38x
The approaches to conformal and superconformal deposition developed by Abelson and Girolami for a low-temperature, low-pressure chemical vapor deposition (CVD) setting relevant for electronic materials in micrometer or submicrometer scale vias and tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1aaeecbba6805d0a4fce58fbdf2a1ff
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-187711
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-187711
Publikováno v:
Journal of Crystal Growth. 453:71-76
ZrB2 films were deposited on 900 °C-preheated or non-preheated GaN(0001) surfaces by direct current magnetron sputtering from a compound target. Analytical transmission electron microscopy and scanning transmission electron microscopy with energy di
Autor:
Nerijus Armakavicius, Urban Forsberg, Sean Knight, Daniel Nilsson, Tino Hofmann, Jr-Tai Chen, Philipp Kühne, Vanya Darakchieva, Erik Janzén
Publikováno v:
physica status solidi c. 13:369-373
In this work we employ terahertz (THz) ellipsometry to determine two-dimensional electron gas (2DEG) density, mobility and effective mass in AlGaN/GaN high electron mobility transistor structures g ...
Publikováno v:
Journal of Materials Chemistry C. 4:863-871
Semi-insulating buffer layers are utilized to prevent leakage currents in Gallium Nitride (GaN) high power semiconductor devices. To make the GaN material semi-insulating, it can be doped with carbon. Carbon is inherently present in the process for p
Autor:
Mattias Thorsell, Sebastian Gustafsson, Anna Malmros, Niklas Rorsman, Erik Janzén, Jr-Tai Chen, Johan Bergsten, Urban Forsberg
Publikováno v:
IEEE Transactions on Electron Devices. 63:333-338
The impact of the sharpness of the AlGaN/GaN interface in high-electron mobility transistors (HEMTs) is investigated. Two structures, one with an optimized AlGaN/GaN interface and another with an unoptimized, were grown using hot-wall metal-organic c