Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Uppili S. Raghunathan"'
Autor:
Alvin Joseph, Vibhor Jain, John Pekarik, Ajay Raman, Shafi Syed, Liu Hang, Ned Cahoon, Randy Wolf, Venkat Vanukuru, Elan Veeramani, Beng Woon Lim, Uppili S. Raghunathan, Qizhi Liu, Yves Ngu
Publikováno v:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4af9998a4aba9f49e280926b2549787b
https://doi.org/10.1109/bcicts53451.2022.10051743
https://doi.org/10.1109/bcicts53451.2022.10051743
Publikováno v:
IEEE Transactions on Electron Devices. 68:987-993
This investigation examines the physical mechanisms that can increase the variability of both p-n junctions and silicon–germanium heterojunction bipolar transistors (SiGe HBTs) at cryogenic temperatures. The important operative mechanisms responsib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0ece4f896eeb85038406c189e093c21
https://doi.org/10.1109/ted.2021.3054358
https://doi.org/10.1109/ted.2021.3054358
Autor:
Jeffrey B. Johnson, Dongmo Pernell, Uppili S. Raghunathan, Rajendran Krishnasamy, Henry Lee Aldridge, John J. Pekarik, Vibhor Jain, Mishra Rahul
Publikováno v:
ECS Transactions. 98:127-134
Process sensitivity and variation, such as layer thicknesses, etch dimensions and doping levels are all process parameters that should be well understood when assessing their impact on end of process wafer quality and device performance. Improvements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23961cb163669d249dec381d3652ad3b
https://doi.org/10.1149/09805.0127ecst
https://doi.org/10.1149/09805.0127ecst
Autor:
Dimitris P. Ioannou, Uppili S. Raghunathan, Dave Brochu, Adam Divergilio, Vibhor Jain, John J. Pekarik
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e1505a14d5128361d7dbc6d238ade82
https://doi.org/10.1109/bcicts50416.2021.9682453
https://doi.org/10.1109/bcicts50416.2021.9682453
Autor:
Ajay Raman, Vibhor Jain, Elanchezhian Veeramani, Beng Woon Lim, Uppili S. Raghunathan, Yves Ngu, Alvin Joseph
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c92e4c6a01e434224f021eb25b214e54
https://doi.org/10.1109/bcicts50416.2021.9682457
https://doi.org/10.1109/bcicts50416.2021.9682457
Autor:
Nelson E. Lourenco, Anup P. Omprakash, Martin Mourigal, Jason Dark, John D. Cressler, Zachary E. Fleetwood, L. Ge, Dragomir Davidovic, Brian R. Wier, Hanbin Ying, Uppili S. Raghunathan
Publikováno v:
IEEE Transactions on Electron Devices. 65:3697-3703
This paper provides insight into the transport mechanisms of the collector current in SiGe HBTs operating at cryogenic temperatures and compares three technology generations of devices. Based on the experimental data, a method to differentiate direct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a1e83e77ce65748377068c894b10916
https://doi.org/10.1109/ted.2018.2854288
https://doi.org/10.1109/ted.2018.2854288
Autor:
John D. Cressler, Anup P. Omprakash, Hanbin Ying, Uppili S. Raghunathan, Tikurete G. Bantu, Hiroshi Yasuda, Brian R. Wier, Philipp Menz, Rafael Perez Martinez
Publikováno v:
IEEE Transactions on Electron Devices. 65:2430-2438
We investigate high current stress mechanisms and demonstrate how Auger hot carriers can damage both oxide interfaces and polysilicon regions of the emitter and base. A new current gain enhancement (CGE) effect is proposed, which involves hot-carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f93f61f37494e48e4ddd68f351224c36
https://doi.org/10.1109/ted.2018.2829184
https://doi.org/10.1109/ted.2018.2829184
Autor:
Michael A. Oakley, John D. Cressler, Alvin J. Joseph, Zachary E. Fleetwood, Vibhor Jain, Brian R. Wier, Uppili S. Raghunathan
Publikováno v:
IEEE Transactions on Electron Devices. 65:793-797
The implementation of a “superjunction” collector design in a silicon–germanium heterojunction bipolar transistor technology is explored for enhancing breakdown performance. The superjunction collector is formed via the placement of a series of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9e684e5880c5c4be66033e48911ad39
https://doi.org/10.1109/ted.2017.2782768
https://doi.org/10.1109/ted.2017.2782768
Autor:
Ickhyun Song, Vibhor Jain, Jeffrey H. Warner, Brian R. Wier, Dale McMorrow, Ani Khachatrian, Uppili S. Raghunathan, George N. Tzintzarov, Zachary E. Fleetwood, Moon-Kyu Cho, En Xia Zhang, Harold L. Hughes, Pauline Paki, Adrian Ildefonso, John D. Cressler, P.J. McMarr, Alvin J. Joseph, Mason T. Wachter, Delgermaa Nergui
Publikováno v:
IEEE Transactions on Nuclear Science. 65:399-406
The doping profile of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) is modified to enhance inverse-mode (IM) device operation. Device improvements are presented in this paper, along with the impact the alterations have on the radia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d690500c30b80d11816879d8d61c5884
https://doi.org/10.1109/tns.2017.2782183
https://doi.org/10.1109/tns.2017.2782183
Autor:
Partha S. Chakraborty, Rajarshi Mukhopadhyay, John D. Cressler, Anup P. Omprakash, Jeffrey A. Babcock, Ha Dao, Uppili S. Raghunathan, Hanbin Ying
Publikováno v:
IEEE Transactions on Electron Devices. 64:3748-3755
Safe-operating-area (SOA) in a high-voltage complementary silicon–germanium (SiGe) (= n-p-n + p-n-p) on silicon-on-insulator (SOI) technology is investigated from 24 °C to 300 °C. Three key reliability degradation regions are identified, includin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f1c3a62658334dc703c2c655f8fd905
https://doi.org/10.1109/ted.2017.2730852
https://doi.org/10.1109/ted.2017.2730852