Zobrazeno 1 - 2
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pro vyhledávání: '"Uppili Raghunathan"'
Autor:
Adrian Ildefonso, Joel M. Hales, Ani Khachatrian, Jeffrey W. Teng, George N. Tzintzarov, Delgermaa Nergui, Brett L. Ringel, Uppili Raghunathan, Vibhor Jain, John D. Cressler, Dale McMorrow
Publikováno v:
IEEE Transactions on Nuclear Science. :1-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6850b061e5213a36ffb723f487ff1a4e
https://doi.org/10.1109/tns.2023.3255169
https://doi.org/10.1109/tns.2023.3255169
Publikováno v:
ECS Meeting Abstracts. :1197-1197
SiGe HBTs offer significant performance advantage over Si BJTs with improved base resistance and base transit time. However, each faster technology iteration usually comes at the cost of reduced breakdown parameters. As a result, devices are often re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7a2984fad7deb94b2be991ed21d7e9c
https://doi.org/10.1149/ma2022-02321197mtgabs
https://doi.org/10.1149/ma2022-02321197mtgabs