Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Umesh P. S. Adiga"'
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
Accurate segmentation of 3D-NAND memory cells and the interfaces of different materials within is the basis of reliable metrology for 3D-NAND memory fabrication. We are proposing a machine learning assisted fast marching level sets method (FMLS) to e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66ecd8d85cfbc54691d5e31575f3c6f9
https://doi.org/10.1117/12.2552080
https://doi.org/10.1117/12.2552080
Autor:
Alain Mousa, Dmitry Batuk, Jason Arjavac, Andrew Barnum, Mark Biedrzycki, Anne-Laure Charley, Umesh P. S. Adiga, Rose Marie Haynes, Phillipe Leray
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
Process monitoring of extreme ultraviolet (EUV) photoresist requires critical dimension analysis and careful control of extracted parameters like line edge roughness (LER) and line width roughness (LWR). Automated SEM metrology typically provides est
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3bae2a7a0ed4de2942c2544f5818f27
https://doi.org/10.1117/12.2552139
https://doi.org/10.1117/12.2552139
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
Process monitoring of critical dimensions and structural shapes in 3D NAND flash memory device manufacturing requires the precision, resolution, and speed of SEM image acquisition and metrology, with new challenges in the Z axis, as device capacity c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c83a9fe43d2ae2ca325b317f955de9
https://doi.org/10.1117/12.2515069
https://doi.org/10.1117/12.2515069
Autor:
Ashley Tilson, Dan Nelson, Umesh P. S. Adiga, Jason Arjavac, Jack Hagger, Justin Roller, Michael Strauss
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
Metrology of 3D NAND device architecture is challenging due to structural complexity, low signal to noise and contrast to noise ratio in the electron micrographs. Efficient, automated tools that can measure critical dimensions of 3D NAND in electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::401df06d0aa8f4ec7a51f426d291d3d7
https://doi.org/10.1117/12.2515074
https://doi.org/10.1117/12.2515074