Zobrazeno 1 - 10
of 903
pro vyhledávání: '"Umesh K Mishra"'
Autor:
Henry Collins, Emre Akso, Christopher J. Clymore, Kamruzzaman Khan, Robert Hamwey, Nirupam Hatui, Matthew Guidry, Stacia Keller, Umesh K. Mishra
Publikováno v:
Electronics Letters, Vol 60, Iss 13, Pp n/a-n/a (2024)
Abstract The authors report a novel structure to improve the high‐frequency performance of nitrogen‐polar GaN deep‐recess high electron mobility transistors (HEMTs) wherein a timed plasma etch was used to tailor the profile of the gate dielectr
Externí odkaz:
https://doaj.org/article/4ef82fba092b4ef8a972ae30dc12bb56
Publikováno v:
South African Journal of Radiology, Vol 28, Iss 1, Pp e1-e4 (2024)
Vein of Galen aneurysmal malformation (VGAM) is a rare congenital malformation characterised by arteriovenous fistulas between primitive choroidal arteries and the median prosencephalic vein, the embryonic precursor to the vein of Galen. Endovascular
Externí odkaz:
https://doaj.org/article/cbf42b8a6e01450d8ce35aff4067ade9
Autor:
Emmanuel Kayede, Emre Akso, Brian Romanczyk, Nirupam Hatui, Islam Sayed, Kamruzzaman Khan, Henry Collins, Stacia Keller, Umesh K. Mishra
Publikováno v:
Crystals, Vol 14, Iss 6, p 485 (2024)
A wet-etching technique based on a mixture of hydrochloric (HCl) and nitric (HNO3) acids is introduced, demonstrating exceptional 42:1 selectivity for etching N-polar GaN over Al0.24Ga0.76N. In the absence of an AlGaN etch stop layer, the etchant pri
Externí odkaz:
https://doaj.org/article/b59664daceea49888ae3d60c552f771c
Autor:
Matthew S. Wong, Aditya Raj, Hsun-Ming Chang, Vincent Rienzi, Feng Wu, Jacob J. Ewing, Emily S. Trageser, Stephen Gee, Nathan C. Palmquist, Philip Chan, Ji Hun Kang, James S. Speck, Umesh K. Mishra, Shuji Nakamura, Steven P. DenBaars
Publikováno v:
AIP Advances, Vol 13, Iss 1, Pp 015107-015107-5 (2023)
The electrical performances of III-nitride blue micro-light-emitting diodes (µLEDs) with different tunnel junction (TJ) epitaxial architectures grown by metalorganic chemical vapor deposition are investigated. A new TJ structure that employs AlGaN i
Externí odkaz:
https://doaj.org/article/ec2e47f313eb46dda386c0c0156ff6dc
Autor:
Vineeta R. Muthuraj, Wenjian Liu, Henry Collins, Weiyi Li, Robert Hamwey, Steven P. DenBaars, Umesh K. Mishra, Stacia Keller
Publikováno v:
Crystals, Vol 13, Iss 4, p 699 (2023)
The electrical properties of InN give it potential for applications in III-nitride electronic devices, and the use of lower-dimensional epitaxial structures could mitigate issues with the high lattice mismatch of InN to GaN (10%). N-polar MOCVD growt
Externí odkaz:
https://doaj.org/article/227a6f01e26f40b69422b59b9fdb69a4
Autor:
Nirupam Hatui, Henry Collins, Emmanuel Kayede, Shubhra S. Pasayat, Weiyi Li, Stacia Keller, Umesh K. Mishra
Publikováno v:
Crystals, Vol 12, Iss 7, p 989 (2022)
Fully relaxed, crack free, smooth AlxGa1−xN layers with up to 50% Al composition were demonstrated on pseudo-substrates composed of dense arrays of 10 × 10 µm2 compliant porous GaN-on-porous-GaN tiles. The AlGaN layers were grown in steps for a t
Externí odkaz:
https://doaj.org/article/ee4e753f5f8046b5abcd15f7f84b35dd
Autor:
Rohit R. Karnaty, Pawana Shrestha, Matthew Guidry, Brian Romanczyk, Umesh K. Mishra, James F. Buckwalter
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 71:1932-1944
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eabec0d12f8f6dadf31cf5ee374904d4
https://doi.org/10.1109/tmtt.2023.3245668
https://doi.org/10.1109/tmtt.2023.3245668
Autor:
Umesh K. Mishra
Publikováno v:
IEEE Spectrum. 60:32-39
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0d17a4377254354ea6ad701398937b3
https://doi.org/10.1109/mspec.2023.10092397
https://doi.org/10.1109/mspec.2023.10092397
Autor:
Umesh K. Mishra
Publikováno v:
Proceedings of the IEEE. 111:322-328
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c51cc3c9e44bbf940a396e820d264e10
https://doi.org/10.1109/jproc.2023.3254279
https://doi.org/10.1109/jproc.2023.3254279
Publikováno v:
Crystals, Vol 12, Iss 6, p 784 (2022)
The shortcomings with acceptors in p-type III-nitride semiconductors have resulted in not many efforts being presented on III-nitride based p-channel electronic devices (here, field effect transistors (FETs)). The polarization effects in III-nitride
Externí odkaz:
https://doaj.org/article/32cf035967734f23bf9cca9159e2aebc