InGaN/GaN multiple quantum well for superfast scintillation application: Photoluminescence measurements of the picosecond rise time and excitation density effect

Autor: Matteo Vannini, Leonida A. Gizzi, G. Toci, Vitezslav Jary, M. Nikl, Petra Koester, F. Baffigi, L. Labate, Lorenzo Fulgentini, Alice Hospodková

Publikováno v: Journal of luminescence 208 (2019): 119–124. doi:10.1016/j.jlumin.2018.12.034
info:cnr-pdr/source/autori:Toci, Guido; Gizzi, Leonida A.; Koester, Petra; Baffigi, Federica; Fulgentini, Lorenzo; Labate, Luca; Hospodkova, Alice; Jary, Vitezslav; Nikl, Martin; Vannini, Matteo/titolo:InGaN%2FGaN multiple quantum well for superfast scintillation application: Photoluminescence measurements of the picosecond rise time and excitation density effect/doi:10.1016%2Fj.jlumin.2018.12.034/rivista:Journal of luminescence/anno:2019/pagina_da:119/pagina_a:124/intervallo_pagine:119–124/volume:208

We report the study of the fast rise time and decay time in the ps time scale of the excitonic luminescence of a multiple quantum well (MQW) heterostructure of InGaN/GaN, including the excitation density effect. These structures were proposed as ultr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f31031b5a788384494123e6d4616cf30
https://doi.org/10.1016/j.jlumin.2018.12.034

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