Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Ulrike Futschik"'
Publikováno v:
Physical Review Letters. 108
A complete geometric view is presented for the optimal unambiguous discrimination among N > 2 pure states. A single intuitive picture contains all aspects of the problem: linear independence of the states, positivity of the detection operators, and a
Autor:
C. G. Fountzoulas, James Castracane, Susan Hayes, Ulrike Futschik, Harry Efstathiadis, Spyros Gallis, Alain E. Kaloyeros, Walter Sherwood
Publikováno v:
MRS Proceedings. 742
Amorphous silicon carbide (SiC) films were deposited on silicon substrates by thermal chemical vapor deposition (TCVD) technique, at substrate temperatures ranging from 620 °C - 850 °C. A novel, single-source halide free precursor, SP-4000, belongi
Autor:
Susan Hayes, Harry Efstathiadis, C. G. Fountzoulas, James Castracane, Leo Macdonald, Ulrike Futschik, Alain E. Kaloyeros
Publikováno v:
MRS Proceedings. 697
Silicon carbide (SiC) films have been successfully deposited on various substrates by oligomer thermal chemical vapor deposition (OTCVD) from a novel, halogen free, oligomer precursor family of polysilyenemethylenes (PSMs) called SP-4000. The high qu