Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Ulrich Welling"'
Autor:
Lawrence S. Melvin, Wolfgang Demmerle, Joachim Siebert, Phil Stopford, Sergey Zavadskiy, Renato Hentschke, Krishna Ramkumar, Sylvain Berthiaume, Yudhishthir Kandel, Wolfgang Hoppe, Ulrich Klostermann, Zachary A. Levinson, Hans-Jürgen Stock, Ulrich Welling
Publikováno v:
DTCO and Computational Patterning II.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5351dc5f03f84147fe7aba90f81a0550
https://doi.org/10.1117/12.2658780
https://doi.org/10.1117/12.2658780
Autor:
Eisuke Ohtomi, Vicky Philipsen, Joren Severi, Ulrich Welling, Laurence S. Melvin, Yosuke Takahata, Yusuke Tanaka, Danilo De Simone
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ba32d310aaab34f1d0765e6968abd99
https://doi.org/10.1117/12.2657287
https://doi.org/10.1117/12.2657287
Publikováno v:
IEICE Transactions on Electronics. :35-46
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c91659666541c4ab1d8f88643fc337b
https://doi.org/10.1587/transele.2021ecp5010
https://doi.org/10.1587/transele.2021ecp5010
Autor:
Eisuke Ohtomi, Vicky Phillipsen, Joren Severi, Ulrich Welling, Yusuke Tanaka, Danilo De Simone
Publikováno v:
Advances in Patterning Materials and Processes XXXIX.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81c7a97560150628e3f597d73f231dbd
https://doi.org/10.1117/12.2605822
https://doi.org/10.1117/12.2605822
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
Background: The metal-oxide resist (MOR) is a promising type of nonchemically amplified resist (CAR) for EUV lithography. This family of resists shows some advantages over the conventional CARs. Even though a prior MOR model exists, no documented ref
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94fc010646e72fd8fb2e53e60b81d723
https://doi.org/10.1117/1.jmm.20.2.024601
https://doi.org/10.1117/1.jmm.20.2.024601
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
Organometallic photoresists are being pursued as an alternative photoresist material to push the current extreme ultraviolet lithography (EUVL) to the next generation of high-NA EUVL. In order to improve the photoresist performance, an understanding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f34f7dd9a3bb327a7a8cf2f9854e329
https://doi.org/10.1117/1.jmm.20.1.014801
https://doi.org/10.1117/1.jmm.20.1.014801
Autor:
Lawrence S. Melvin, Ulrich Welling, Yudhishthir Kandel, Zachary A. Levinson, Hironobu Taoka, Hans-Jurgen Stock, Wolfgang Demmerle
Publikováno v:
Japanese Journal of Applied Physics. 61:SD1030
Extreme ultra-violet lithography lithography resolves features below 11 nm. However, photonic and atomic variations at these photon energies and dimensions lead to less than 1:109 potential stochastic defects causing device failures in stable manufac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3293a6ad169af17fad561dfda63d2e23
https://doi.org/10.35848/1347-4065/ac5b22
https://doi.org/10.35848/1347-4065/ac5b22
Autor:
Jürgen Preuninger, Ulrich Klostermann, Jongsu Kim, Hans-Jürgen Stock, Ulrich Welling, Sang-Yil Chang, Hyungju Ryu, Kyoung-sub Shin, Wolfgang Demmerle, Eunsoo Jeong, Hyekyoung Jue, Joon-Soo Park, Jung-Hoe Choi, Sang-Jin Kim
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
For the past years, ArF immersion has been employed as the major lithography tool in the foundry manufacturing to fabricate the patterns of minimum pitch and size. However, for semiconductor scaling beyond N7 the application of EUV lithography is con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab0c4bfe75ff6b348a87b2afdefcea26
https://doi.org/10.1117/12.2553319
https://doi.org/10.1117/12.2553319
Autor:
Ulrich Welling
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
Finding a process window and improving the yield for EUV single exposure nodes requires an understanding of stochastic defects. Stochastic simulations can be used as a tool to understand the influence of the process on defectivity. This presentation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcc6f435e0e8447c9b72e67e7155faff
https://doi.org/10.1117/12.2551876
https://doi.org/10.1117/12.2551876
Autor:
Peter De Schepper, Lawrence S. Melvin, Joren Severi, Amrit K. Narasimhan, Danilo De Simone, Craig D. Needham, Ulrich Welling, Stephen T. Meyers, Joren Wouters
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
MOx resists have matured into promising alternatives to conventional CAR resists for advanced-node EUV lithography where these materials offer potential improvements to patterning fidelity and high etch resistance based on metallic components. This i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa21e87a00d8ca7c1ec3ddf0e56dcae1
https://doi.org/10.1117/12.2552151
https://doi.org/10.1117/12.2552151