Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Ulrich Dr. Strößner"'
Autor:
Dirk Hellweg, Ulrich Dr. Strößner, Jan Hendrik Peters, Sascha Perlitz, Markus Weiss, Wolfgang Harnisch
Publikováno v:
SPIE Proceedings.
The high volume device manufacturing infrastructure for the 22nm node and below based on EUVL technology requires defect-free EUV mask manufacturing as one of its foundations. The EUV Mask Infrastructure program (EMI) initiated by SEMATECH has identi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c2f9fe6738483824f6dd46fc02e8fbd
https://doi.org/10.1117/12.899038
https://doi.org/10.1117/12.899038
Autor:
Dirk Hellweg, Michael Ringel, Ulrich Dr. Strößner, Sascha Perlitz, Wolfgang Harnisch, Heiko Feldmann
Publikováno v:
27th European Mask and Lithography Conference.
On the road to and beyond the 22nm half-pitch on chip patterning technology, 13.5nm EUVL is widely considered the best next technology generation following deep ultraviolet lithography. The availability of an actinic measurement system for the printa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d5ddaf630a1dc18685f8072a84e0217
https://doi.org/10.1117/12.895208
https://doi.org/10.1117/12.895208
Publikováno v:
Photomask Technology 2008.
The AIMS™45-193i is the established tool for mask performance qualification and defect printing analysis in the mask shop under scanner conditions. Vector effects are taken into account by the proprietary Zeiss vector effect emulator. In several st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f324aa9f8cd1173f3d4138cd53b095ae
https://doi.org/10.1117/12.801226
https://doi.org/10.1117/12.801226
Publikováno v:
SPIE Proceedings.
Recently more and more mask designs for critical layers involve strong OPC which increases the complexity for standard CD SEM mask measurements and conclusive interpretation of results. For wafer printing the wafer level CD is the crucial measure if
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16ed480ed1e5ee543c72c175c589cc6d
https://doi.org/10.1117/12.793102
https://doi.org/10.1117/12.793102
Autor:
Thomas Scherübl, Ulrich Dr. Strößner, Robert Birkner, Klaus Böhm, Arndt C. Dürr, Rigo Richter
Publikováno v:
23rd European Mask and Lithography Conference.
Mask manufacturing for the 45nm node for hyper NA lithography requires tight defect and printability control at small features sizes. The AIMS TM 1 technology is a well established methodology to analyze printability of mask defects, repairs and crit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf8d58c9e1f341f644e909f6cb3a6eff
https://doi.org/10.1117/12.736530
https://doi.org/10.1117/12.736530