Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Ulises Zavala-Moran"'
Autor:
Maxime Bouschet, Ulises Zavala-Moran, Vignesh Arounassalame, Rodolphe Alchaar, Clara Bataillon, Isabelle Ribet-Mohamed, Francisco de Anda-Salazar, Jean-Philippe Perez, Nicolas Péré-Laperne, Philippe Christol
Publikováno v:
Photonics, Vol 8, Iss 6, p 194 (2021)
In this paper, the influence of etching depth on the dark current and photo-response of a mid-wave infrared Ga-free T2SL XBn pixel detector is investigated. Two wet chemical etching depths have been considered for the fabrication of a non-passivated
Externí odkaz:
https://doaj.org/article/342d8ffdbdee4e3cbe85c21cec65d69a
Autor:
María Magdalena Montsserrat Contreras Turrubiartes, Ulises Zavala Moran, Jorge Alberto López Gallardo, Miguel Angel Vidal Borbolla, Edgar López Luna
Publikováno v:
Journal of Engineering Research. 3:2-11
Autor:
Jean-Philippe Perez, Maxime Bouschet, Rodolphe Alchaar, Isabelle Ribet-Mohamed, Vignesh Arounassalame, Francisco de Anda-Salazar, Nicolas Péré-Laperne, Philippe Christol, Clara Bataillon, Ulises Zavala-Moran
Publikováno v:
Photonics
Photonics, MDPI, 2021, 8 (6), pp.194. ⟨10.3390/photonics8060194⟩
Photonics, Vol 8, Iss 194, p 194 (2021)
Volume 8
Issue 6
Photonics, MDPI, 2021, 8 (6), pp.194. ⟨10.3390/photonics8060194⟩
Photonics, Vol 8, Iss 194, p 194 (2021)
Volume 8
Issue 6
International audience; In this paper, the influence of etching depth on the dark current and photo-response of a mid-wave infrared Ga-free T2SL XBn pixel detector is investigated. Two wet chemical etching depths have been considered for the fabricat