Zobrazeno 1 - 10
of 160
pro vyhledávání: '"Ulfat I"'
The detailed nature of electronic states mediating ferromagnetic coupling in dilute magnetic semiconductors, specifically (Ga,Mn)As, has been an issue of long debate. Two confronting models have been discussed emphasizing host band vs. impurity band
Externí odkaz:
http://arxiv.org/abs/1608.06821
New detailed angle-resolved photoemission data are presented, revealing the existence of an Mn-induced state that extends into the band gap of GaAs. In sharp contrast to recent reports we observe that the state is highly dispersive. Spin resolved pho
Externí odkaz:
http://arxiv.org/abs/1410.8842
Resonant in situ photoemission from Mn 3d states in Ga_{1-x}Mn_{x}As is reported for Mn concentrations down to very dilute limit of 0.1 at %. The properties of the peak at the valence-band maximum reveal an effective interaction between Mn 3d states
Externí odkaz:
http://arxiv.org/abs/1310.0961
Using synchrotron based photoemission, we have investigated the Mn-induced changes in Ga 3d core level spectra from as-grown ${\rm Ga}_{1-x}{\rm Mn}_{x}{\rm As}$. Although Mn is located in Ga substitutional sites, and does therefore not have any Ga n
Externí odkaz:
http://arxiv.org/abs/1207.1570
Publikováno v:
Surface Science 605 (2011) 875-877
The valence band electronic structure of Pr$_{0.5}$Sr$_{0.5}$MnO$_3$ has been investigated across its paramagnetic metallic (PMM) - ferromagnetic metallic (FMM) - antiferromagnetic insulator (AFMI) transition. Using surface sensitive high resolution
Externí odkaz:
http://arxiv.org/abs/1104.3302
Thermally stimulated diffusion of Mn across the (Ga,Mn)As/GaAs interface has been studied by X-ray photoemission. Ga(0.95)Mn(0.05)As layers were capped with GaAs of different thickness 4, 6 and 8ML, and Mn diffusing through the GaAs layers was trappe
Externí odkaz:
http://arxiv.org/abs/0912.4680
Valence band photoemission with photon energies around the Mn2p excitation threshold has been used to study the development of nanowires catalyzed by MnAs particles. A gradual change in the spectra with increasing nanowire length is observed, such th
Externí odkaz:
http://arxiv.org/abs/0907.0247
The initial growth of MnBi on MnAs terminated (GaMn)As is studied by means of synchrotron based photoelectron spectroscopy. From analysis of surface core level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi
Externí odkaz:
http://arxiv.org/abs/0903.1266
Autor:
Jafri MA; Department of Physics, University of Karachi, Karachi 75270, Pakistan., Ulfat I; Department of Physics, University of Karachi, Karachi 75270, Pakistan.
Publikováno v:
Journal of radiological protection : official journal of the Society for Radiological Protection [J Radiol Prot] 2024 Apr 24; Vol. 44 (2). Date of Electronic Publication: 2024 Apr 24.
Publikováno v:
The Quarterly Review of Biology, 2014 Sep 01. 89(3), 209-233.
Externí odkaz:
https://www.jstor.org/stable/10.1086/677572