Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Ukyo Jeong Ukyo Jeong"'
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
One of the major challenges of meeting the source/drain extension requirements for high performance scaled devices is to achieve low series resistance with shallow junctions. Pre-amorphization has been used to suppress implant channeling and to enhan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbacfa8384ef2c4ad9a281f6cbf0a60a
https://doi.org/10.1109/iit.2000.924122
https://doi.org/10.1109/iit.2000.924122
Autor:
J. Weeman, Che-Hoo Ng, S. Mehta, Steven R. Walther, G. Angel, Ukyo Jeong Ukyo Jeong, W. Piscitello
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
Wafer charge control has evolved from systems that add gas to the beam or extract electrons from an external source to systems that respond directly to beam potential and current density via an externally coupled plasma. The capability of a plasma to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cded9e44f872d0564fe71875e905bcb4
https://doi.org/10.1109/iit.1999.812195
https://doi.org/10.1109/iit.1999.812195
Autor:
Zhiyong Zhao Zhiyong Zhao, B. Cusson, Ukyo Jeong Ukyo Jeong, R. Lindberg, S. Mehta, J. Buller, C. Campbell
Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
As CMOS device technology is scaled in pursuit of ever improving circuit performance requirements, ion implant processing must meet the demands imposed by this device scaling. Control of beam incident angle on high current implanters is one unprecede
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::965d4521c1e39807f4918a7573a35c87
https://doi.org/10.1109/iit.2002.1257939
https://doi.org/10.1109/iit.2002.1257939