Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Ukyo Jeong"'
Publikováno v:
Materials Science and Engineering: B. :72-76
Ion implantation has long been considered a commodity in semiconductor device manufacturing. Historically, precision of beam incident angle has not been a critical requirement. However, with the miniaturization of semiconductor devices, the tradition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c9e0ad375aaa75313785df76dc1b7e3
https://doi.org/10.1016/j.mseb.2004.07.038
https://doi.org/10.1016/j.mseb.2004.07.038
Publikováno v:
Surface and Coatings Technology. 186:68-72
The productivity advantage of pulsed plasma implantation versus traditional beamline-based implantation has long been its primary attraction. To assess the technical potential of plasma-based implant for semiconductors, we will compare pulsed plasma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63b82e6fc8f5811007d73415e915b324
https://doi.org/10.1016/j.surfcoat.2004.04.014
https://doi.org/10.1016/j.surfcoat.2004.04.014
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
One of the major challenges of meeting the source/drain extension requirements for high performance scaled devices is to achieve low series resistance with shallow junctions. Pre-amorphization has been used to suppress implant channeling and to enhan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbacfa8384ef2c4ad9a281f6cbf0a60a
https://doi.org/10.1109/iit.2000.924122
https://doi.org/10.1109/iit.2000.924122
Autor:
J. Weeman, Che-Hoo Ng, S. Mehta, Steven R. Walther, G. Angel, Ukyo Jeong Ukyo Jeong, W. Piscitello
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
Wafer charge control has evolved from systems that add gas to the beam or extract electrons from an external source to systems that respond directly to beam potential and current density via an externally coupled plasma. The capability of a plasma to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cded9e44f872d0564fe71875e905bcb4
https://doi.org/10.1109/iit.1999.812195
https://doi.org/10.1109/iit.1999.812195
Autor:
Zhiyong Zhao Zhiyong Zhao, B. Cusson, Ukyo Jeong Ukyo Jeong, R. Lindberg, S. Mehta, J. Buller, C. Campbell
Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
As CMOS device technology is scaled in pursuit of ever improving circuit performance requirements, ion implant processing must meet the demands imposed by this device scaling. Control of beam incident angle on high current implanters is one unprecede
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::965d4521c1e39807f4918a7573a35c87
https://doi.org/10.1109/iit.2002.1257939
https://doi.org/10.1109/iit.2002.1257939
Publikováno v:
MRS Proceedings. 864
Change in dopant diffusion was observed for Arsenic source drain extension (SDE) implants when they were performed at various dose rates. The high dose SDE implant amorphizes the surface of the silicon substrate and the thickness of the amorphous lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bbf4994b7570bf352800d3898358864
https://doi.org/10.1557/proc-864-e4.32
https://doi.org/10.1557/proc-864-e4.32
TCAD modelling of PLAD implantations and application to sub-65nm technological nodes [plasma doping]
Autor:
Steven R. Walther, Ukyo Jeong, A. Dray, E. Robilliart, Damien Lenoble, D. Villanueva, F. Lallement, S. Mehta, Herve Jaouen, E. Balossier, L. Vet, A. Grouillet, F. Salvetti
Publikováno v:
Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).
Plasma doping (PLAD) is an ion implantation technique under investigation to realize ultra-shallow junctions for 65 nm nodes and beyond. This technique has been modelled and is integrated in TCAD process simulation tools. The most influential paramet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac31380503a781eaa904a8f6ace11087
https://doi.org/10.1109/essder.2004.1356575
https://doi.org/10.1109/essder.2004.1356575
Publikováno v:
AIP Conference Proceedings.
As CMOS technology moves into sub‐100nm regime, significance of non‐planar structure effects have grown. Traditional ion implant performed at off‐critical angle exhibits shortfalls in device integration and performance merits. Modern ion implan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7192e493bcd3e3bd31126aed0ca4adfc
https://doi.org/10.1063/1.1619810
https://doi.org/10.1063/1.1619810
Publikováno v:
Proceedings of the 14th International Conference on Ion Implantation Technology, 2002; 2002, p64-68, 5p
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:422
Solid phase epitaxial (SPE) annealing at low temperature has the advantage of high dopant activation and very little dopant diffusion. However, due to the low thermal budget engaged in SPE, a large amount of defects can exist in the area beyond the o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::438879d333752ec5e616191092aac773
https://doi.org/10.1116/1.1424279
https://doi.org/10.1116/1.1424279