Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Ujwal Radhakrishna"'
Publikováno v:
Journal of Microelectromechanical Systems. 30:744-750
This paper studies the optimization of mechanics and resource allocation in linear vibration energy harvesters operating under an overall size constraint. In such harvesters, the volume aspect ratio and the stroke direction should be carefully select
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaf8416e21df9d10eabc3fce0f849238
https://doi.org/10.1109/jmems.2021.3100280
https://doi.org/10.1109/jmems.2021.3100280
Publikováno v:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a55fe7d907048faac6de85dd4290a75e
https://doi.org/10.1109/bcicts53451.2022.10051736
https://doi.org/10.1109/bcicts53451.2022.10051736
Publikováno v:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a717fa168d76f110d2b432d3a298c3dc
https://doi.org/10.1109/bcicts53451.2022.10051741
https://doi.org/10.1109/bcicts53451.2022.10051741
Publikováno v:
Journal of Microelectromechanical Systems. 29:1518-1522
This paper presents a mechanically-robust high-power-density electromagnetic vibration energy harvester fabricated from MP35N alloy. Its primary focus is on the use of MP35N alloy, and the corresponding performance. It follows our prior work on a sim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee535ca19ecdfc907c164af0d8647168
https://doi.org/10.1109/jmems.2020.3026057
https://doi.org/10.1109/jmems.2020.3026057
Autor:
Lin Zhou, Xiang Ji, Tomas Palacios, Pin-Chun Shen, Xu Zhang, Xi Ling, Xiaoxue Wang, Ujwal Radhakrishna, Han Wang, Yuhao Zhang, Madan Dubey, Jesus Grajal, J. L. Vazquez-Roy, Jing Kong, Yuxuan Lin, Winston Chern, Ahmad Zubair, Mildred S. Dresselhaus
Publikováno v:
Nature. 566:368-372
The mechanical and electronic properties of two-dimensional materials make them promising for use in flexible electronics1–3. Their atomic thickness and large-scale synthesis capability could enable the development of ‘smart skin’1,3–5, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25c9080f1360e4dd89c5d7e46915a0b1
https://doi.org/10.1038/s41586-019-0892-1
https://doi.org/10.1038/s41586-019-0892-1
Publikováno v:
IEEE Transactions on Electron Devices. 66:95-105
This paper illustrates the usefulness of the physics-based compact device models in investigating the impact of device behavioral nuances on the operation and performance of the circuits and systems. The industry standard MIT virtual source gallium n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d52c2adac45eb2b5e5b3dc2e48faeb41
https://doi.org/10.1109/ted.2018.2848721
https://doi.org/10.1109/ted.2018.2848721
Autor:
Ahmad Zubair, Tathagata Srimani, Yosi Stein, Ujwal Radhakrishna, Gage Hills, Rebecca Park, Dimitri A. Antoniadis, Max M. Shulaker, Mindy D. Bishop, Tomas Palacios
Publikováno v:
IEEE Electron Device Letters. 39:304-307
As continued scaling of silicon FETs grows increasingly challenging, alternative paths for improving digital system energy efficiency are being pursued. These paths include replacing the transistor channel with emerging nanomaterials (such as carbon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33272be5171d9fb59bdfe0e28352c7ff
https://doi.org/10.1109/led.2017.2781901
https://doi.org/10.1109/led.2017.2781901
Publikováno v:
Smart Materials and Structures. 30:125030
This paper presents a system-level design approach for widening the bandwidth and lowering the operating voltage of a piezoelectric vibration energy harvesting system (PVEHS). The proposed strategy involves co-optimization of the two constituent part
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d007d3977bed7f44f87f0878735654d8
https://doi.org/10.1088/1361-665x/ac3402
https://doi.org/10.1088/1361-665x/ac3402
Publikováno v:
IEEE Electron Device Letters. 38:1335-1338
We analyze the effects of ferroelectric leakage on the performance of a negative capacitance field-effect transistor (NCFET), which has an intermediatemetallic layer between the ferroelectric and the high-K dielectric. We show that, when designed wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adf6c28420d98218f6decc58b85c9c9b
https://doi.org/10.1109/led.2017.2733382
https://doi.org/10.1109/led.2017.2733382
Publikováno v:
BCICTS
In this work, we extend the industry standard MIT Virtual Source GaN HEMT (MVSG) model to include layout dependent effects such as scaling of parasitic fringing capacitances, scaling of distributed gate- and channel-resistance, and scaling of thermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c31ab8de9eeab359e2dd576b8344be1
https://doi.org/10.1109/bcicts45179.2019.8972762
https://doi.org/10.1109/bcicts45179.2019.8972762