Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Uitsu Tanaka"'
Publikováno v:
Journal of Crystal Growth. :444-447
GaN/Pd/GaN sandwich structure was successfully grown by plasma enhanced molecular beam epitaxy on sapphire (0 0 0 1) substrate. Single crystals of Pd and overlayered GaN were confirmed by RHEED and X-ray diffraction. Epitaxial relationship between Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cac115d7f8158ca6358672ebe6e11918
https://doi.org/10.1016/s0022-0248(98)01372-4
https://doi.org/10.1016/s0022-0248(98)01372-4
Autor:
Uitsu Tanaka, Hajime Okumura, Sung Hwan Cho, Sadafumi Yoshida, Katsuhiro Akimoto, Takahiro Maruyama
Publikováno v:
Journal of Crystal Growth. :112-116
Cathodoluminescence (CL) topographs were taken at room temperature at 364 nm on undoped GaN films grown by plasma-enhanced molecular beam epitaxy at various V/III ratios. The CL topographs were compared with scanning electron microscope (SEM) images.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f4faa65825a82789e2fae2fc5563b8e
https://doi.org/10.1016/s0022-0248(96)00865-2
https://doi.org/10.1016/s0022-0248(96)00865-2
Publikováno v:
Japanese Journal of Applied Physics. 35:L644
Effects of nitrogen ion irradiation on photoluminescence (PL) properties at 77 K of undoped GaN grown by plasma enhanced molecular beam epitaxy were investigated. It was found that for epitaxial layers grown under ion irradiation conditions, the PL s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::791303c17aab5b52e44f57cbfb3ce0e6
https://doi.org/10.1143/jjap.35.l644
https://doi.org/10.1143/jjap.35.l644
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