Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Ugochukwu Nsofor"'
Publikováno v:
ACS Applied Materials & Interfaces. 11:16181-16190
Passivation of the interface defect states is crucial to mitigate the recombination losses in silicon solar cells. In this work, we have investigated the role of hydrogen plasma treatment (HPT) to passivate the interfacial defects between crystalline
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0bb7289e7d9cde52b19dbca05b9182ee
https://doi.org/10.1021/acsami.9b01686
https://doi.org/10.1021/acsami.9b01686
Publikováno v:
IEEE Photonics Technology Letters. 29:775-778
This letter reports the demonstration of a novel method to passively tune the splitting ratio of a Ti-indiffused lithium niobate (LiNbO 3 ) 3-dB directional coupler by the addition of a silicon-rich nitride cladding material. Plasma-enhanced chemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa680f93423f4efc415c3a0e01b33abd
https://doi.org/10.1109/lpt.2017.2685458
https://doi.org/10.1109/lpt.2017.2685458
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
The amorphous (a-Si:H) and crystalline silicon (c-Si) interface plays a pivotal role in determining the V oc of the silicon heterojunction solar cell. Extrinsic hydrogenation by plasma treatment of the a-Si:H films is shown in this work to be a viabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1370c60a47191d1aaab61953ed159e06
https://doi.org/10.1109/pvsc40753.2019.8980808
https://doi.org/10.1109/pvsc40753.2019.8980808
Autor:
Kevin D. Dobson, Ugochukwu Nsofor, Zeming Sun, Mool C. Gupta, Steven Hegedus, Arpan Sinha, Ujjwal Das
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
Laser patterning of seed layers for Cu electroplated interdigitated contacts on Ni/a-SiN x :H/Si substrates is presented. Damage was controlled by varying the laser conditions. Cu growths shorted the contacts due to conductive residues in the scribe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::574ecf4ff77ca0987dd88fd310222b80
https://doi.org/10.1109/pvsc40753.2019.8981365
https://doi.org/10.1109/pvsc40753.2019.8981365
Autor:
Anishkumar Soman, Robert A. Burke, Qui Li, Michael Valentin, Eugene Zakar, Ugochukwu Nsofor, Steven Hegedus, Ujjwal K. Das, Jianping Shi, Yanfeng Zhang, Tingyi Gu
Publikováno v:
Conference on Lasers and Electro-Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::437e3aa2c057305ead6b295197e4b2fe
https://doi.org/10.1364/cleo_at.2019.jtu2a.118
https://doi.org/10.1364/cleo_at.2019.jtu2a.118
Autor:
Zeming Sun, Kevin D. Dobson, Ujjwal Das, Steven Hegedus, Mool C. Gupta, Anishkumar Soman, Arpan Sinha, Ugochukwu Nsofor
Publikováno v:
ECS Meeting Abstracts. :1845-1845
Metallization of interdigitated back contacts for Si-based solar cells (IBC), where both the n- and p-contacts are processed on the rear side of the device, currently requires costly and labor-intensive masking, photolithography, and/or screen printi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62ddd817b4a5a80605a9509b9de46050
https://doi.org/10.1149/ma2020-02271845mtgabs
https://doi.org/10.1149/ma2020-02271845mtgabs
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
In this paper, the effects of interrupted deposition of intrinsic hydrogenated amorphous silicon (i.a-Si:H) on the Si surface passivation are studied. Vibrational and optical properties of the i.a-Si:H films have been studied using Fourier transform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abf19f1921e4ee9c1c6a2ceb356bbecf
https://doi.org/10.1109/pvsc.2018.8547458
https://doi.org/10.1109/pvsc.2018.8547458
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
To achieve high-efficiency and low-cost c-Si solar cells, laser-based isolation and patterning of interdigitated back contact heterojunction (IBC-HJ) solar cells have attracted increasing attention due to simplification of the complex and ratelimitin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1b3743a4e4fa6800610706842f07685
https://doi.org/10.1109/pvsc.2018.8547964
https://doi.org/10.1109/pvsc.2018.8547964
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Excellent passivation at the a-Si:HI c-Si interface is required for high efficiency heterojunction solar cells. Hydrogen plasma treatment after the a-Si deposition has been considered as an effective and manufacturable method to saturate the surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f15367cc07badfea41fe34a321830f6
https://doi.org/10.1109/pvsc.2017.8366194
https://doi.org/10.1109/pvsc.2017.8366194
Autor:
Yanfeng Zhang, Tingyi Gu, Jianping Shi, Steven Hegedus, Ugochukwu Nsofor, Anishkumar Soman, Robert A. Burke
Publikováno v:
Frontiers in Optics 2017.
In this study we report the effect of hydrogen plasma treatment on Graphene/ MoS2 hybrid heterostructures using Raman spectroscopy. The effect of plasma voltage on the defects has been investigated on graphene, MoS2 and the hybrid structure.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::769e29b3c2d562dd92a0ef90bfa10056
https://doi.org/10.1364/fio.2017.jw4a.40
https://doi.org/10.1364/fio.2017.jw4a.40