Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Uesugi Tomohiro"'
Publikováno v:
2019 Compound Semiconductor Week (CSW).
In situ synchrotron X-ray reciprocal space mapping was carried out to investigate the evolution of lattice strain and crystal structure of InGaN/GaN heterostructure nanowires grown by molecular beam epitaxy. At the beginning of the growth, the InGaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6467bae557c6924156c6916ea4cf54ea
https://doi.org/10.1109/iciprm.2019.8819209
https://doi.org/10.1109/iciprm.2019.8819209
Publikováno v:
2019 Compound Semiconductor Week (CSW).
The molecular beam epitaxial (MBE) growth of twenty-period InGaN/GaN multi-quantum-well (MQW) nanowires was investigated by in situ X-ray reciprocal space mapping (in situ RSM). The evolution of strain, composition, and their inhomogeneities during t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dedb2fa055c0060c0c6644672e7598e1
https://doi.org/10.1109/iciprm.2019.8819193
https://doi.org/10.1109/iciprm.2019.8819193