Zobrazeno 1 - 10
of 81
pro vyhledávání: '"Uemoto, Mitsuharu"'
Autor:
Adachi, Hayato, Endo, Ryuusuke, Shinya, Hikari, Naganuma, Hiroshi, Ono, Tomoya, Uemoto, Mitsuharu
In our previous work, we synthesized a metal/2D material heterointerface consisting of $L1_0$-ordered iron-palladium (FePd) and graphene (Gr) called FePd(001)/Gr. This system has been explored by both experimental measurements and theoretical calcula
Externí odkaz:
http://arxiv.org/abs/2308.02171
Density functional theory calculations for the electronic structures of the 4H-SiC(0001)/SiO$_2$ interface with atomic-scale steps are carried out to investigate the effect of NO annealing. The characteristic behavior of the conduction band edge stat
Externí odkaz:
http://arxiv.org/abs/2308.00413
Valleytronics, which makes use of the two valleys in graphenes, attracts considerable attention and a valley filter is expected to be the central component in valleytronics. We propose the application of the graphene valley filter using blister defec
Externí odkaz:
http://arxiv.org/abs/2305.15726
Publikováno v:
J. Appl. Phys. 132, 155701 (2022)
We propose the atomic structures of the 4H-SiC/SiO$_2$ interface for the $a$, $m$, C, and Si faces after NO annealing. Our proposed structures preferentially form at the topmost layers of the SiC side of the interface, which agrees with the experimen
Externí odkaz:
http://arxiv.org/abs/2204.13870
Autor:
Uemoto, Mitsuharu, Yabana, Kazuhiro
We have developed a computational method to describe the nonlinear light propagation of an intense and ultrashort pulse at oblique incidence on a flat surface. In the method, coupled equations of macroscopic light propagation and microscopic electron
Externí odkaz:
http://arxiv.org/abs/2203.16766
Publikováno v:
Jpn. J. Appl. Phys. 61 SH1001 (2022)
The stability and formation mechanism of the defects relevant to silicon and carbon vacancies at the 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation are investigated by first-principles calculation based on the density functional theory. T
Externí odkaz:
http://arxiv.org/abs/2202.06067
Graphene on $L1_0$-FePd(001), which has been experimentally studied in recent years, is a heterogeneous interface with a significant lattice symmetry mismatch between the honeycomb structure of graphene and tetragonal alloy surface. In this work, we
Externí odkaz:
http://arxiv.org/abs/2201.07942
Publikováno v:
In Computer Physics Communications February 2024 295
A nitridation annealing process is well employed to reduce interface trap states that degrade the channel mobility of 4H-SiC/SiO${}_2$ metal-oxide-semiconductor field-effect transistor. In recent experiments, the existence of high N-atom density laye
Externí odkaz:
http://arxiv.org/abs/2009.01627
Publikováno v:
Phys. Rev. B 103, 085433 (2021)
We theoretically investigate ultrafast and nonlinear optical properties of graphite thin films based on first-principles time-dependent density functional theory. We first calculate electron dynamics in a unit cell of graphite under a strong pulsed e
Externí odkaz:
http://arxiv.org/abs/2009.01979