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Origin of the giant spin Hall effect in BiSb topological insulator

Autor: Shirokura, Takanori, Yao, Kenichiro, Ueda, Yugo, Hai, Pham Nam

The giant spin Hall effect (SHE) at room temperature is one of the most attractive feature of topological insulators (TIs) for applications to nano-scale spin devices. Its origin, however, remains a controversial problem. Here, we identify the origin

Externí odkaz: http://arxiv.org/abs/1810.10840

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A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching

Autor: Khang, Nguyen Huynh Duy, Ueda, Yugo, Hai, Pham Nam

Publikováno v: Nature Materials 17, 808-813 (2018)

Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavy metals and topological insulators (TIs) has great potential for ultra-low power magnetoresistive random-access memory (MRAM). To be competitive with conventional spin-transfe

Externí odkaz: http://arxiv.org/abs/1709.07684

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