Zobrazeno 1 - 10
of 359
pro vyhledávání: '"Udvarhelyi P"'
Qubits are the fundamental units in quantum computing, but they are also pivotal for advancements in quantum communication and sensing. Currently, there are a variety of platforms for qubits, including cold atoms, superconducting circuits, point defe
Externí odkaz:
http://arxiv.org/abs/2412.04904
Autor:
Scheller, D., Hrunski, F., Schwarberg, J. H., Knolle, W., Soykal, Ö. O., Udvarhelyi, P., Narang, P., Weber, H. B., Hollendonner, M., Nagy, R.
Semiconductor components based on silicon carbide (SiC) are a key component for high-power electronics. Their behavior is determined by the interplay of charges and electric fields, which is typically described by modeling and simulations that are ca
Externí odkaz:
http://arxiv.org/abs/2410.10750
Autor:
Udvarhelyi, Péter, Narang, Prineha
Defect emitters in silicon are promising contenders as building blocks of solid-state quantum repeaters and sensor networks. Here we investigate a family of possible isoelectronic emitter defect complexes from a design standpoint. We show that the id
Externí odkaz:
http://arxiv.org/abs/2409.10746
Autor:
Durand, Alrik, Baron, Yoann, Udvarhelyi, Péter, Cache, Félix, R., Krithika V., Herzig, Tobias, Khoury, Mario, Pezzagna, Sébastien, Meijer, Jan, Hartmann, Jean-Michel, Reboh, Shay, Abbarchi, Marco, Robert-Philip, Isabelle, Gali, Adam, Gérard, Jean-Michel, Jacques, Vincent, Cassabois, Guillaume, Dréau, Anaïs
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the s
Externí odkaz:
http://arxiv.org/abs/2404.15069
Autor:
Ecker, Sebastian, Fink, Matthias, Scheidl, Thomas, Sohr, Philipp, Ursin, Rupert, Arshad, Muhammad Junaid, Bonato, Cristian, Cilibrizzi, Pasquale, Gali, Adam, Udvarhelyi, Péter, Politi, Alberto, Trojak, Oliver J., Ghezellou, Misagh, Hassan, Jawad Ul, Ivanov, Ivan G., Son, Nguyen Tien, Burkard, Guido, Tissot, Benedikt, Hendriks, Joop, Gilardoni, Carmem M., van der Wal, Caspar H., David, Christian, Astner, Thomas, Koller, Philipp, Trupke, Michael
Quantum communication promises unprecedented communication capabilities enabled by the transmission of quantum states of light. However, current implementations face severe limitations in communication distance due to photon loss. Silicon carbide (Si
Externí odkaz:
http://arxiv.org/abs/2403.03284
Autor:
Aberl, Johannes, Navarrete, Enrique Prado, Karaman, Merve, Enriquez, Diego Haya, Wilflingseder, Christoph, Salomon, Andreas, Primetzhofer, Daniel, Schubert, Markus Andreas, Capellini, Giovanni, Fromherz, Thomas, Deák, Peter, Udvarhelyi, Péter, Song, Li, Gali, Ádám, Brehm, Moritz
Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC fabrication, deterministic control over the vertical emitter position
Externí odkaz:
http://arxiv.org/abs/2402.19227
Autor:
Krumrein, Marcel, Nold, Raphael, Davidson-Marquis, Flavie, Bourama, Arthur, Niechziol, Lukas, Steidl, Timo, Peng, Ruoming, Körber, Jonathan, Stöhr, Rainer, Gross, Nils, Smet, Jurgen, Ul-Hassan, Jawad, Udvarhelyi, Péter, Gali, Adam, Kaiser, Florian, Wrachtrup, Jörg
Publikováno v:
ACS Photonics 2024, 11, 6, 2160
Emitters in high refractive index materials like 4H-SiC suffer from reduced detection of photons because of losses caused by total internal reflection. Thus, integration into efficient nanophotonic structures which couple the emission of photons to a
Externí odkaz:
http://arxiv.org/abs/2401.06096
Transition metal (TM) defects in silicon carbide (SiC) are a promising platform for applications in quantum technology as some of these defects, e.g. vanadium (V), allow for optical emission in one of the telecom bands. For other defects it was shown
Externí odkaz:
http://arxiv.org/abs/2310.19719
Point defects may introduce defect levels into the fundamental band gap of the host semiconductors that alter the electrical properties of the material. As a consequence, the in-gap defect levels and states automatically lower the threshold energy of
Externí odkaz:
http://arxiv.org/abs/2310.09849
Publikováno v:
BMC Biology, Vol 22, Iss 1, Pp 1-15 (2024)
Abstract Background While complex dog–human coexistence has been deeply investigated, there is a relative scarcity of similar knowledge regarding dog–dog interactions. Social learning, a fundamental synchronizing mechanism between dogs and humans
Externí odkaz:
https://doaj.org/article/92456f12347c4c7e9b5a1baa800ed0dc
