Zobrazeno 1 - 10
of 120
pro vyhledávání: '"Udo Schwalke"'
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 2 (2023)
The evaluation of the world’s first MOSFETs with epitaxially-grown rare-earth high-k gate dielectrics is the main issue of this work. Electrical device characterization has been performed on MOSFETs with high-k gate oxides as well as their referenc
Externí odkaz:
https://doaj.org/article/6692ced7642140c19136d5dfd622e1e7
Publikováno v:
ACS Omega, Vol 6, Iss 29, Pp 18770-18781 (2021)
Externí odkaz:
https://doaj.org/article/d0120e2d1e0e42a3938256adcecf62d7
Autor:
Udo Schwalke
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 1 (2005)
In this work we report on the process integration of crystalline praseodymium oxide (Pr2O3) high-k gate dielectric. Key process steps that are compatible with the high-k material have been developed and were applied for realisation of MOS structures.
Externí odkaz:
https://doaj.org/article/6b5e6405775848619e79ed84bec8015e
Publikováno v:
ACS Omega, Vol 6, Iss 29, Pp 18770-18781 (2021)
ACS Omega
ACS Omega
The first-principles calculation of pristine, B-, Al-, Ga-, Sb-, and Bi-doped blue phosphorene (BlueP) with adsorbed SO2, NO, and NO2 gas molecules including the transport and optical properties is reported. The electronic structures of pristine and
Autor:
Udo Schwalke, Mahdi Moradinasab, Tillmann Krauss, Johannes Pfau, Maximilian Reuter, Jürgen Becker, Klaus Hofmann
Publikováno v:
LASCAS
Recently, unique novel characteristics of ambipolar transistors have been explored in various forms on both device and cell level. Most of these so called reconfigurable or polarity controllable devices are based on silicon nanowires, carbon nanotube
Autor:
Mahdi Moradinasab, Jürgen Becker, Tillmann Krauss, Maximilian Reuter, Udo Schwalke, Johannes Pfau, Klaus Hofmann
Publikováno v:
APCCAS
Ambipolar transistors have emerged recently and are presented on device and cell level. The ability to conduct both electrons and holes is often provided by the use of silicon nanowires, carbon nanotubes or similar gate-all-around topologies. Large s
Autor:
Udo Schwalke, Dennis Noll
Publikováno v:
ECS Transactions. 86:13-21
In the course of an increasing awareness for the protection of public health a higher demand for environmental gas sensors, especially for the detection of volatile organic compounds and toxic gases, has been noted. Reasonably-priced devices to cover
Autor:
Udo Schwalke, Dennis Noll
Publikováno v:
ECS Transactions. 86:41-49
For the development of next-generation gas sensors with higher sensitivity, selectivity, responsivity and cost-effectiveness, carbon-based materials are a major research topic. Graphene, as a two-dimensional nanomaterial with a high surface-to-volume
Publikováno v:
IEEE Transactions on Electron Devices. 64:3808-3815
The physical influence of temperature down to the cryogenic regime is analyzed in a comprehensive study and the comparison of IV and III–V Schottky barrier (SB) double-gate MOSFETs. The exploration is done using the Synopsys TCAD Sentaurus device s
Publikováno v:
DTIS
We report a first-principles study of the transport and optical properties of pristine, B-, C-, and N-doped blue phosphorous monolayers with adsorbed N 2 , O 2 , H 2 S, SO 2 , CO, CO 2 , NH 3 , NO, and NO 2 gas molecules. The transmission spectrum an