Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Udo Mundloch"'
Autor:
Maria Koleśnik-Gray, Laura Meingast, Martin Siebert, Tim Unbehaun, Tobias Huf, Günter Ellrott, Gonzalo Abellán, Stefan Wild, Vicent Lloret, Udo Mundloch, Julian Schwarz, Michael Niebauer, Maximilian Szabo, Mathias Rommel, Andreas Hutzler, Frank Hauke, Andreas Hirsch, Vojislav Krstić
Publikováno v:
npj 2D Materials and Applications, Vol 7, Iss 1, Pp 1-7 (2023)
Abstract Multilayers of so-called 2D van der Waals materials have gained considerable attention as active components of next-generation electronic and optoelectronic technologies, with semiconducting black phosphorus (BP) regarded as one of the most
Externí odkaz:
https://doaj.org/article/d2126918a07548cba8297a67eaac13af
Autor:
Philipp Vecera, Johannes Holzwarth, Konstantin F. Edelthalhammer, Udo Mundloch, Herwig Peterlik, Frank Hauke, Andreas Hirsch
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
Graphite intercalation compounds are promising precursors for the reductive exfoliation of graphene. Here, the authors unveil the discharging mechanism of reduced graphitic compounds in a solid/liquid phase reaction, and further demonstrate its pract
Externí odkaz:
https://doaj.org/article/aba6a9843f1a4ec683d3927c98195181
Publikováno v:
Journal of the American Chemical Society
Herein, the combined application of characterization tools, such as Raman spectroscopy, thermal gravimetric analysis coupled with mass spectrometry, and optical and atomic force microscopy, confirms the reductive silylation of synthetic carbon allotr
Autor:
Janina Maultzsch, Frank Hauke, Stefan Wild, Nils Scheuschner, Udo Mundloch, Andreas Hirsch, Roland Gillen, Vicent Lloret, Maria Varela, Gonzalo Abellán
Publikováno v:
Journal of the American Chemical Society
Herein, we have developed a systematic study on the oxidation and passivation of mechanically exfoliated black phosphorus (BP). We analyzed the strong anisotropic behavior of BP by scanning Raman microscopy providing an accurate method for monitoring
Autor:
Hans-Georg Steinrück, Marcus Halik, Johannes Kirschner, Saeideh Mohammadzadeh, Frank Hauke, Thomas Schmaltz, Claudia Backes, Andreas Hirsch, Zhenxing Wang, Artoem Khassanov, Andreas Magerl, Udo Mundloch, Siegfried Eigler
Publikováno v:
ACS Nano. 7:11427-11434
Approaches for the selective self-assembly of functionalized carbon allotropes from solution are developed and validated for 0D-fullerenes, 1D-carbon nanotubes and 2D-graphene. By choosing the right molecular interaction of self-assembled monolayers
Autor:
Florian Jakubka, Frank Hauke, Claudia Backes, Florentina Gannott, Andreas Hirsch, Jana Zaumseil, Udo Mundloch
Publikováno v:
ACS Nano. 7:7428-7435
We demonstrate random network single-walled carbon nanotube (SWNT) field-effect transistors (FETs) in bottom contact/top gate geometry with only five different semiconducting nanotube species that were selected by dispersion with poly(9,9-dioctylfluo
Publikováno v:
Journal of the American Chemical Society. 138(5)
The hydrogenation and deuteration of graphite with potassium intercalation compounds (GICs) as starting materials was investigated. Characterization of the reactions products (hydrogenated and deuterated graphene) was carried out by thermogravimetric
Publikováno v:
ChemPhysChem. 12:2576-2580
fundamental aspects is the precise analysis of as-produced SWCNTs, as a widely applicable, readily and quickly available standard protocol for the determination of the absolute nanotube purity (with regard to structurally perfect SWCNTs in the bulk s
Publikováno v:
Chemistry - A European Journal. 16:3314-3317
Autor:
Volkmar Zielasek, Katharina Kohse-Höinghaus, Theodor Weiss, Udo Mundloch, Martin Nowak, Marcus Bäumer
Optimizing thin film deposition techniques requires contamination-free transfer from the reactor into an ultrahigh vacuum (UHV) chamber for surface science analysis. A very compact, multifunctional Chemical Vapor Deposition (CVD) reactor for direct a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89c734dbdceff52d1df4e280a67aec07
https://doi.org/10.1063/1.4897620
https://doi.org/10.1063/1.4897620