Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Uccelli, Emanuele"'
Autor:
Krizek, Filip, Sestoft, Joachim E., Aseev, Pavel, Marti-Sanchez, Sara, Vaitiekenas, Saulius, Casparis, Lucas, Khan, Sabbir A., Liu, Yu, Stankevic, Tomas, Whiticar, Alexander M., Fursina, Alexandra, Boekhout, Frenk, Koops, Rene, Uccelli, Emanuele, Kouwenhoven, Leo P., Marcus, Charles M., Arbiol, Jordi, Krogstrup, Peter
Publikováno v:
Phys. Rev. Materials 2, 093401 (2018)
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we s
Externí odkaz:
http://arxiv.org/abs/1802.07808
Autor:
Heiß, Martin, Ketterer, Bernt, Uccelli, Emanuele, Morante, Joan Ramon, Arbiol, Jordi, Morral, Anna Fontcuberta i
Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temp
Externí odkaz:
http://arxiv.org/abs/1011.5152
Autor:
Heiß, Martin, Conesa-Boj, Sonia, Ren, Jun, Tseng, Hsiang-Han, Gali, Adam, Rudolph, Andreas, Uccelli, Emanuele, Peiro, Francesca, Morante, Joan Ramon, Schuh, Dieter, Reiger, Elisabeth, Kaxiras, Efthimios, Arbiol, Jordi, Morral, Anna Fontcuberta i
A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by p
Externí odkaz:
http://arxiv.org/abs/1011.5165
Autor:
Djara, Vladimir, Czornomaz, Lukas, Deshpande, Veeresh, Daix, Nicolas, Uccelli, Emanuele, Caimi, Daniele, Sousa, Marilyne, Fompeyrine, Jean
Publikováno v:
In Solid State Electronics January 2016 115 Part B:103-108
Autor:
Djara, Vladimir, Sousa, Marilyne, Dordevic, Nikola, Czornomaz, Lukas, Deshpande, Veeresh, Marchiori, Chiara, Uccelli, Emanuele, Caimi, Daniele, Rossel, Christophe, Fompeyrine, Jean
Publikováno v:
In Microelectronic Engineering 1 November 2015 147:231-234
Autor:
Kormondy, Kristy J., Abel, Stefan, Fallegger, Florian, Popoff, Youri, Ponath, Patrick, Posadas, Agham B., Sousa, Marilyne, Caimi, Daniele, Siegwart, Heinz, Uccelli, Emanuele, Czornomaz, Lukas, Marchiori, Chiara, Fompeyrine, Jean, Demkov, Alexander A.
Publikováno v:
In Microelectronic Engineering 1 November 2015 147:215-218
Akademický článek
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Akademický článek
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Autor:
Aseev, Pavel, Fursina, Alexandra, Boekhout, Frenk, Krizek, Filip, Sestoft, Joachim E., Borsoi, Francesco, Heedt, Sebastian, Wang, Guanzhong, Binci, Luca, Martí-Sánchez, Sara, Swoboda, Timm, Koops, René, Uccelli, Emanuele, Arbiol, Jordi, Krogstrup, Peter, Kouwenhoven, Leo P., Caroff, Philippe
Publikováno v:
Nano Letters; December 2018, Vol. 19 Issue: 1 p218-227, 10p
Autor:
Hei��, Martin, Ketterer, Bernt, Uccelli, Emanuele, Morante, Joan Ramon, Arbiol, Jordi, Morral, Anna Fontcuberta i
Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for growth temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fc42297854c73db32ed86d0f429ff3d
http://arxiv.org/abs/1011.5152
http://arxiv.org/abs/1011.5152