Zobrazeno 1 - 10
of 153
pro vyhledávání: '"URBACH RULE"'
Publikováno v:
Фізика і хімія твердого тіла, Vol 24, Iss 3, Pp 495-498 (2023)
A comparative analysis of the edge absorption spectra measured in the temperature range of 290–470 K for two types of zinc selenide substrates has been carried out. It has been established that the self-absorption edge of pure ZnSe: Yb melt crystal
Externí odkaz:
https://doaj.org/article/14854f0866374a8fa18f2fd8f973b91a
Akademický článek
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Publikováno v:
Advanced Photonics Research, Vol 3, Iss 1, Pp n/a-n/a (2022)
Metal halide perovskites (MHPs) are attracting ever‐growing interest across diverse optoelectronic subdisciplines. Yet, the physical mechanism underlying photoexcitation and subsequent photocarrier dynamics remains poorly understood, due to the app
Externí odkaz:
https://doaj.org/article/6696cbf64e2a4ad5a383eb3fba8cc98a
Autor:
I.P. Studenyak
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 19, Iss 2, Pp 192-196 (2019)
Cu7GeS5I thin films were obtained by non-reactive radio frequency magnetron sputtering onto silicate glass substrates. Optical transmission spectra of as-deposited and annealed Cu7GeS5I thin films were measured in the temperature interval 77–300 K.
Externí odkaz:
https://doaj.org/article/3c454bd03026429eadb34ef133050c95
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 20, Iss 1, Pp 64-68 (2017)
Cu5.5P1.2Se5.0I1.3 thin film was deposited onto silicate glass substrate by non-reactive radio frequency magnetron sputtering. Structural studies were carried out using X-ray diffraction and SEM techniques. Spectrometric studies of transmission spect
Externí odkaz:
https://doaj.org/article/6e55cc99168e41bd861eb207d47c6c7d
Autor:
Zamurueva O.V., Myronchuk G.L., Oźga K., Szota M., El-Naggar A.M., Albassam A.A., Parasyuk O.V., Piskach L.V., Kityk I.V.
Publikováno v:
Archives of Metallurgy and Materials, Vol 60, Iss 3, Pp 2025-2028 (2015)
Temperature dependences of electroconductivity for single crystals Tl1−xIn1−xGexSe2 were analyzed. It was established an occurrence of thermoactivated states within the temperature range 100-300 K. The conductivity is formed by delocalized carrie
Externí odkaz:
https://doaj.org/article/48814127afe641339d5e7208b35ce79a
Akademický článek
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Autor:
Ihor Studenyak
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 19, Iss 2, Pp 192-196 (2019)
Cu7GeS5I thin films were obtained by non-reactive radio frequency magnetron sputtering onto silicate glass substrates. Optical transmission spectra of as-deposited and annealed Cu7GeS5I thin films were measured in the temperature interval 77–300 K.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7cd1441ccd4b37f85461fd598379d5d
http://journal-spqeo.org.ua/n2_2016/P192-196abstr.html
http://journal-spqeo.org.ua/n2_2016/P192-196abstr.html
Publikováno v:
Materials, Vol 14, Iss 1639, p 1639 (2021)
Materials
Volume 14
Issue 7
Materials
Volume 14
Issue 7
We are reporting an esoteric method to determine the optical bandgap of direct gap materials by employing Urbach’s rule. The latter, which describes the slope of the band tail absorption in semiconductors, in its original version, cannot be employe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5640cae1a3acdf8936256be406aba79c
https://www.mdpi.com/1996-1944/14/7/1639
https://www.mdpi.com/1996-1944/14/7/1639
Akademický článek
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