Zobrazeno 1 - 10
of 136
pro vyhledávání: '"UHF power amplifiers"'
Publikováno v:
IET Circuits, Devices and Systems, Vol 16, Iss 7, Pp 553-568 (2022)
Abstract This article presents the design and optimisation of a sub‐1 GHz class‐F ultra‐low power (ULP) power amplifier (PA) in 65 nm Complementary Metal Oxide Semiconductor (CMOS) technology. An envelope tracking (ET) supply biasing technique
Externí odkaz:
https://doaj.org/article/9acfe6a5fd944c30af076dadff0eb41a
Autor:
Khizar Hayat, Salahuddin Zafar, Tariq Mehmood, Busra Cankaya Akoglu, Ekmel Ozbay, Ahsan Kashif
Publikováno v:
IET Circuits, Devices and Systems, Vol 15, Iss 8, Pp 830-841 (2021)
Abstract This work presents a gallium nitride (GaN) high electron mobility transistor (HEMT)–based cascaded multistage power amplifier (MPA) in class‐AB for L‐band radar applications. The purpose of this endeavour is to develop an MPA using GaN
Externí odkaz:
https://doaj.org/article/350dcf142b4f4337a16db41cc95114c4
Autor:
Hoff, Brad W.1, French, David M.1
Publikováno v:
IEEE Transactions on Plasma Science. Aug2016 Part 1, Vol. 44 Issue 8, Part 1, p1265-1269. 5p.
Publikováno v:
Microwave & Optical Technology Letters; Oct2018, Vol. 60 Issue 10, p2496-2500, 5p, 1 Color Photograph, 3 Diagrams, 1 Chart, 2 Graphs
Autor:
Kyle Holzer, Jeffrey S. Walling
Publikováno v:
The Journal of Engineering (2015)
Integration of a class-E power amplifier (PA) and a thin-film bulk acoustic wave resonator (FBAR) filter is shown to provide high power added efficiency in addition to superior out-of-band spectrum suppression. A discrete gallium arsenide pseudomorph
Externí odkaz:
https://doaj.org/article/658b429513314e16afa31b235eb619e9
Autor:
Bertran, Eduard
Publikováno v:
Telecommunication Systems; Jun2016, Vol. 62 Issue 2, p363-373, 11p
Publikováno v:
ThomasNet News. 6/28/2018, p26-26. 1p.
Publikováno v:
IEEE Microwave and Wireless Components Letters. 30:47-49
A measurement-based approach for the analysis of Doherty power amplifiers (DPAs) is presented. The DPA behavior is emulated using an active load–pull setup, exciting a single device under test (DUT) in either of two states, corresponding to the mai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d90a477f47c8b03b590132c8556b3ff7
https://doi.org/10.1109/lmwc.2019.2955065
https://doi.org/10.1109/lmwc.2019.2955065
Autor:
Jose A. Garcia, David Vegas, Pere L. Gilabert, Gabriel Montoro, Jose R. Perez-Cisneros, Ren Zhixiong, Si Xiaoshu, M. Nieves Ruiz
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Universitat Politècnica de Catalunya (UPC)
© 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::505628b568a08c33928fc910da66bbfc
https://doi.org/10.1109/pawr46754.2020.9035997
https://doi.org/10.1109/pawr46754.2020.9035997
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