Zobrazeno 1 - 10
of 110
pro vyhledávání: '"U.V Desnica"'
Publikováno v:
Physica B: Condensed Matter. :887-890
The goal of this study was to identify microscopic causes of the extensive changes in electrical properties observed in CdS crystal when doped with some fast-diffusers (FD), Cu, Ag or Au. The compensation of donors and the dynamics of in-diffusion wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0516e11b92b73b4951f362d4a0637b84
https://doi.org/10.1016/s0921-4526(99)00546-3
https://doi.org/10.1016/s0921-4526(99)00546-3
Publikováno v:
Physica B: Condensed Matter. :907-910
Electrical deactivation of donors in CdS was studied by using Perturbed γγ Angular correlation (PAC) spectroscopy and temperature dependence of Hall mobility, resistivity, and free-carrier concentration. PAC spectra and electrical properties were m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0560889daae5fad798b554745148327b
https://doi.org/10.1016/s0921-4526(99)00551-7
https://doi.org/10.1016/s0921-4526(99)00551-7
Publikováno v:
Journal of Crystal Growth. 197:612-615
Microscopic origin of full electrical compensation of donor doped CdS was analyzed with perturbed angular correlation and Hall-effect measurements. Single crystals were implanted with radioactive 111 In and stable 115 In ions. Total In concentration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4662a938e924772b926268c40a08e920
https://doi.org/10.1016/s0022-0248(98)00809-4
https://doi.org/10.1016/s0022-0248(98)00809-4
Autor:
U.V. Desnica
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 36:291-357
Wide-band-gap II–VI semiconductors have a potential for a variety of applications especially in the areas of light-emitting and light-detecting devices, photovoltaic conversion (solar cells), X-ray and γ -ray detection, etc . In all applications,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::898e3536aa4cf0ae2beab8c0a60aaedf
https://doi.org/10.1016/s0960-8974(98)00011-4
https://doi.org/10.1016/s0960-8974(98)00011-4
Autor:
M. Deicher, Robert Magerle, Walter Pfeiffer, U.V Desnica, F. Pleiter, Th. Wichert, R. Keller, H. Skudlik
Publikováno v:
Applied Surface Science, 50(1-4), 159-164. ELSEVIER SCIENCE BV
The local lattice environment of the donor In in CdS is investigated measuring the electric-field gradient at the site of the radioactive probe atom 111In by the perturbed gammagamma angular correlation technique. It is shown that implantation of In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f77666938a020cca5d3fb07b8b28caa
https://hdl.handle.net/11370/c16121de-29a9-4722-8618-3d336fba1005
https://hdl.handle.net/11370/c16121de-29a9-4722-8618-3d336fba1005
Publikováno v:
3rd International Conference Smart Materials, Structures and Systems-Smart Optics, CIMTEC 2008, pp. 127–131, Acireale, Sicily; Italy, 8-13 June 2008
info:cnr-pdr/source/autori:M. Ivanda, M. Buljan, U.V. Desnica, K. Furi, D. Ristic, G.C. Righini, M. Ferrari/congresso_nome:3rd International Conference Smart Materials, Structures and Systems-Smart Optics, CIMTEC 2008/congresso_luogo:Acireale, Sicily; Italy/congresso_data:8-13 June 2008/anno:2008/pagina_da:127/pagina_a:131/intervallo_pagine:127–131
info:cnr-pdr/source/autori:M. Ivanda, M. Buljan, U.V. Desnica, K. Furi, D. Ristic, G.C. Righini, M. Ferrari/congresso_nome:3rd International Conference Smart Materials, Structures and Systems-Smart Optics, CIMTEC 2008/congresso_luogo:Acireale, Sicily; Italy/congresso_data:8-13 June 2008/anno:2008/pagina_da:127/pagina_a:131/intervallo_pagine:127–131
The Ge+SiO2 and SiO2 alternating multilayers are prepared by the magnetron sputtering of germanium and silica targets. By controlling the substrate temperature and by subsequent thermal annealing, the self-organized germanium quantum dots in 3D rombo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::b66fe3762b4674f5a31b382a4c0ad9c3
http://www.cnr.it/prodotto/i/237719
http://www.cnr.it/prodotto/i/237719
Publikováno v:
Proceedings of the 7th Conference on Semi-insulating III-V Materials.
The time evolution of the paramagnetic signals and the photo-current in the same semi-insulating GaAs during 1.2eV illumination at low temperatures can be analyzed within the same charge transfer model. The latter involves neutral compensating donor-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cfc006ccc959a2ea810222038caa150
https://doi.org/10.1109/sim.1992.752705
https://doi.org/10.1109/sim.1992.752705
Publikováno v:
Proceedings of the 7th Conference on Semi-insulating III-V Materials.
Photoconductivity transients in semi-insulating (SI) GaAs during illumination with low intensity light are studied. By an original usage of thermally stimulated current method, the photoconductivity transient is related to the process of filling of d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9fb7136d960d48425df06105b5da9e8
https://doi.org/10.1109/sim.1992.752706
https://doi.org/10.1109/sim.1992.752706
Autor:
M.Ivanda, A. Hohl, K. Furiæ, A. Turkoviæ, U.V. Desnica, M. Buljan, P. Biljanoviæ, Z.Crnjak Orel, M. Montagna, M. Ferrari.
Publikováno v:
28th International Convention MIPRO on Microelectronics. Electronics, and Electronic Technologies, Opatija, Croatia, May 30-June 3, 2005
info:cnr-pdr/source/autori:M.Ivanda, A. Hohl, K. Furiæ, A. Turkoviæ, U.V. Desnica, M. Buljan, P. Biljanoviæ, Z.Crnjak Orel, M. Montagna, M. Ferrari./congresso_nome:28th International Convention MIPRO on Microelectronics. Electronics, and Electronic Technologies/congresso_luogo:Opatija, Croatia/congresso_data:May 30-June 3, 2005/anno:2005/pagina_da:/pagina_a:/intervallo_pagine
Scopus-Elsevier
info:cnr-pdr/source/autori:M.Ivanda, A. Hohl, K. Furiæ, A. Turkoviæ, U.V. Desnica, M. Buljan, P. Biljanoviæ, Z.Crnjak Orel, M. Montagna, M. Ferrari./congresso_nome:28th International Convention MIPRO on Microelectronics. Electronics, and Electronic Technologies/congresso_luogo:Opatija, Croatia/congresso_data:May 30-June 3, 2005/anno:2005/pagina_da:/pagina_a:/intervallo_pagine
Scopus-Elsevier
The Raman scattering on acoustical phonons from silicon quantum dots in glass matrix were investigated. Two peaks that correspond symmetric and quadrupolar modes of spherical vibrations were found and compared with the model calculation for in- and o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e3986c698485f1a477c2adf9ea0ee283
https://publications.cnr.it/doc/81555
https://publications.cnr.it/doc/81555
Defects responsible for compensation of CdS doped with fast diffusors were studied, using perturbed angular correlation spectroscopy (PAC). Cu was evaporated on CdS containing 111In probe atoms, and annealed at room temperature (RT). This resulted in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eae844f4fd584482d8a370f1dec0cfbb
https://www.bib.irb.hr/319622
https://www.bib.irb.hr/319622