Zobrazeno 1 - 10
of 42
pro vyhledávání: '"U.S. Sias"'
Autor:
Evaldo Ribeiro, Fernando Iikawa, Moni Behar, U.S. Sias, E. Silveira, K.D. Machado, C.C. Baganha, Eduardo Ceretta Moreira, M. J. S. P. Brasil
Publikováno v:
Journal of Luminescence. 209:291-294
This article shows results on photoluminescence measurements of Si nanocrystals embedded in a SiO2 matrix. Photoluminescence spectra were obtained as functions of both temperature (10–510 K) and excitation power (0.01–100 mW). Optical emission ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3af1b53d08316e8ddcc25b9448e6fdf
https://doi.org/10.1016/j.jlumin.2019.01.039
https://doi.org/10.1016/j.jlumin.2019.01.039
Publikováno v:
Journal of Luminescence. 153:144-147
In the present work, we have studied the photoluminescence (PL) and decay lifetime of Tb and Eu nanoparticles (NPs) at low temperatures. The NPs were obtained by ion implantation into a SiO2 matrix. Concerning the PL emission of Tb NPs (from 370 to 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92e5b8ac86327b1d597de18d508f16a3
https://doi.org/10.1016/j.jlumin.2014.03.015
https://doi.org/10.1016/j.jlumin.2014.03.015
Photoluminescence and structural studies of Tb and Eu implanted at high temperatures into SiO2 films
Publikováno v:
Journal of Luminescence. 135:232-238
The present work deals with the photoluminescence (PL) emitted from Eu and Tb ions implanted at room temperature (RT) up to 350 °C in a SiO2 matrix, followed by a further anneal process. The ions were implanted with energy of 100 keV and a fluence o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f83af329328c630fbb04329cd5002d53
https://doi.org/10.1016/j.jlumin.2012.10.010
https://doi.org/10.1016/j.jlumin.2012.10.010
Publikováno v:
Journal of Luminescence. 131:2377-2381
In the present paper we report structural and photoluminescence (PL) results from samples obtained by Si implantation into stoichiometric silicon nitride (Si3N4) films. The Si excess was introduced in the matrix by 170 keV Si implantation performed a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f304acd3d7e6e06c226ebbe887feb841
https://doi.org/10.1016/j.jlumin.2011.05.066
https://doi.org/10.1016/j.jlumin.2011.05.066
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 266:3125-3128
Si nanocrystals (Si NCs) produced by hot implantation present two photoluminescence (PL) bands (at 780 and 1000 nm, respectively) when measured at low pump power (∼20 mW/cm2). Since each PL band was shown to have different origin we have investigat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be87fba22159132c929e265eaa6e6f02
https://doi.org/10.1016/j.nimb.2008.03.172
https://doi.org/10.1016/j.nimb.2008.03.172
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 257:51-55
We report an investigation on the effect of the fluence and annealing time on the photoluminescence (PL) from Si nanocrystals produced by hot implantation of Si into a SiO 2 matrix followed by thermal treatment in nitrogen. We have varied the implant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b65260b4d9bbb8e29acecee228f4853
https://doi.org/10.1016/j.nimb.2006.12.114
https://doi.org/10.1016/j.nimb.2006.12.114
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 257:6-10
In the present work we have investigated the influence of the post-annealing environment on the photoluminescence (PL) recovery of Si nanocrystals after ion irradiation. Samples originally produced by Si implantation into SiO2 matrix at 600 °C post-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6e8a9d8d362d7add70f819c761cccdd
https://doi.org/10.1016/j.nimb.2006.12.112
https://doi.org/10.1016/j.nimb.2006.12.112
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 250:178-182
In the present work we have studied the photoluminescence (PL) behavior from Si nanocrystals (NCs) as a function of the excitation power density and annealing time. The NCs were produced in a SiO2 matrix by Si implantations from room temperature (RT)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efd10f786f52163bc7488bf80f76d92f
https://doi.org/10.1016/j.nimb.2006.04.104
https://doi.org/10.1016/j.nimb.2006.04.104
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 242:109-113
In this work we present a photoluminescence (PL) study on Si nanocrystals produced by ion implantation on SiO2 targets at temperatures ranging between 25 and 800 °C and subsequently annealed in N2 atmosphere. The PL measurements were performed at lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dce199a3f99ef28400925686ccd4cc6
https://doi.org/10.1016/j.nimb.2005.08.007
https://doi.org/10.1016/j.nimb.2005.08.007
Autor:
U.S. Sias, Eduardo Ceretta Moreira, Moni Behar, Evaldo Ribeiro, Henri Ivanov Boudinov, L. Amaral
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 218:405-409
Photoluminescence (PL) of Si nanocrystals embedded in SiO 2 was systematically studied by changing Si fluence, implantation temperature (−200 up to 800 °C) and post-annealing temperature. PL signal in the wavelength range 650–1000 nm was observe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::447f80c84cb6b908526f40442c78ef37
https://doi.org/10.1016/j.nimb.2003.12.019
https://doi.org/10.1016/j.nimb.2003.12.019