Zobrazeno 1 - 10 of 26 pro vyhledávání: '"U. Z. Zalibekov"'
1
High-Pressure Magnetic and Transport Properties of Zn0.1Cd0.9GeAs2 + n wt % MnAs (n = 10 or 15) Nanocomposites
Autor: I. V. Fedorchenko, U. Z. Zalibekov, T. R. Arslanov, R. K. Arslanov
Publikováno v: Inorganic Materials. 55:96-100
The magnetic susceptibility χ(T) of Zn0.1Cd0.9GeAs2 + n wt % MnAs (n = 10 or 15) ferromagnetic nanocomposites with a Curie temperature TC = 310 K has been measured as a function of temperature in the temperature range 270–350 K, and their resistiv
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::991ef6bb51633fc42311636398434cd9
https://doi.org/10.1134/s0020168519010011
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4
Transport and magnetic properties of a Zn0.1Cd0.9GeAs2 + 10 wt % MnAs composite with magnetic clusters at high pressure
Autor: T. R. Arslanov, I. V. Fedorchenko, U. Z. Zalibekov, R. K. Arslanov
Publikováno v: Physics of the Solid State. 59:483-486
The temperature (T = 77–420 K) dependences of the electrical resistivity and the magnetization, the magnetic-field (H ≤ 5 kOe) and pressure (P ≤ 7 GPa) dependences of the resistivity, the Hall coefficient, and the magnetization have been measur
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1c8e8ce0510086874033bea9e2ae4c49
https://doi.org/10.1134/s1063783417030052
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5
Large pressure-induced magnetoresistance in a hybrid ferromagnet-semiconductor system: Effect of matrix modification on the spin-dependent scattering
Autor: I. V. Fedorchenko, Rajeev Ahuja, T. R. Arslanov, Lukasz Kilanski, Tapan Chatterji, U. Z. Zalibekov
Publikováno v: 'Journal of Applied Physics ', vol: 128, pages: 213903-1-213903-8 (2020)
Magnetic nanocomposites based on MnAs clusters embedded in a chalcopyrite host usually do not exhibit large magnetoresistance (MR) at room temperature, while pronounced effects are localized at very low temperatures. In the present work, we observed
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc24d500da90d34fbdf690d5b19cd8db
https://doi.org/10.1063/5.0033676
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6
Effect of high pressure on the electrical resistivity and the volume change in ferromagnetic semiconductors AIIBIVC 2 V :Mn
Autor: T. R. Arslanov, I. V. Fedorchenko, I. K. Kamilov, U. Z. Zalibekov, R. K. Arslanov, A. Yu. Mollaev
Publikováno v: Russian Journal of Inorganic Chemistry. 60:994-998
In bulk samples of p-Cd1 − x Mn x GeP2, p-Cd1 − x Mn x GeAs2, and p-Zn1 − x Mn x GeAs2 at high hydrostatic pressures (P ≤ 9 GPa), the pressure dependences of the electrical resistivity and the volume change were studied. In all the studied sa
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9bde762cf88f11f46413712be221ee86
https://doi.org/10.1134/s0036023615080136
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7
Resistivity and bulk compressibility of manganese-doped ZnGeAs2 at hydrostatic pressures of up to 9 GPa
Autor: R. K. Arslanov, U. Z. Zalibekov, S. F. Marenkin, A. Yu. Mollaev, I. V. Fedorchenko, T. R. Arslanov, I. K. Kamilov
Publikováno v: Inorganic Materials. 51:299-301
We have measured the resistivity and relative bulk compressibility of Zn1 − xMnxGeAs2 (x = 0.02 and 0.4) samples at hydrostatic pressures of up to 9 GPa. The pressure dependences of the resistivity and relative compressibility demonstrate sharp cha
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::570c0b803c6033cf0ed175abd2ff73f7
https://doi.org/10.1134/s0020168515030103
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8
Electrical and magnetic properties of the diluted magnetic semiconductors Cd1 − x Mn x GeP2 and Cd1 − x Mn x GeAs2 at high pressures
Autor: U. Z. Zalibekov, I. K. Kamilov, S. F. Marenkin, I. V. Fedorchenko, V. M. Trukhan, A. Yu. Mollaev, R. K. Arslanov, Vladimir M. Novotortsev, T. R. Arslanov
Publikováno v: Inorganic Materials. 48:872-876
The structural and magnetic phase transitions and magnetoresistance of the diluted magnetic semiconductors Cd1 − xMnxGeAs2 and Cd1 − xMnxGeP2 have been studied at high hydrostatic pressures, up to 7 GPa. The normal and anomalous Hall coefficients
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::883874842dc1ab0dfb631ee7662c9eba
https://doi.org/10.1134/s0020168512090105
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9
Charge and magnetization transport in Cd0.81Mn0.19GeP2 dilute magnetic semiconductor under high pressures
Autor: S. F. Marenkin, T. R. Arslanov, I. V. Fedorchenko, I. K. Kamilov, V. M. Trukhan, U. Z. Zalibekov, A. Yu. Mollaev, R. K. Arslanov, Vladimir M. Novotortsev
Publikováno v: Russian Journal of Inorganic Chemistry. 57:987-990
Cd0.81Mn0.19GeP2 dilute magnetic semiconductor (DMS) has been subjected to a complex study of electric and magnetic properties under high hydrostatic pressures of up to 7 GPa with pressure rise and release. Electrical resistivity, Hall factor, transv
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4716ef8b973a6b1382f47ebcbd741591
https://doi.org/10.1134/s0036023612070145
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10
Magnetic properties of dilute magnetic semiconductor Cd0.82Mn0.18GeAs2 under high pressures
Autor: T. R. Arslanov, I. K. Kamilov, I. V. Fedorchenko, U. Z. Zalibekov, A. Yu. Mollaev, R. K. Arslanov, S. F. Marenkin
Publikováno v: Russian Journal of Inorganic Chemistry. 56:924-927
We have studied the effect of high pressures on the electrical and magnetic properties of dilute magnetic semiconductor Cd0.82Mn0.18GeAs2. Electrical resistivity, Hall coefficient, transverse and longitudinal magnetic resistance, and magnetic suscept
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::24a7bd698411ed6ca42cf5d3fcd664ae
https://doi.org/10.1134/s0036023611060180
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