Zobrazeno 1 - 10
of 45
pro vyhledávání: '"U. Weinert"'
Publikováno v:
Brain Injury. 19:955-958
Foreign accent syndrome (FAS) is a very rare disorder, caused by lesions of the dominant brain hemisphere and defined as a loss of normal phonetic contrast when using the mother language. The pronunciation is perceived by native speakers as compromis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::039df3002e33328299912b1cc6d8621c
https://doi.org/10.1080/02699050500109506
https://doi.org/10.1080/02699050500109506
Publikováno v:
Design and Nature 2010 Fifth International Conference on Comparing Design in Nature with Science and Engineering, 28.-30.06.2010, Pisa, Italia
Self-assembling biomolecules are widespread in nature and attractive for technical purposes due to their size and highly ordered structures in nanometer range. Surface-layer (S-layer) proteins are one of those self-assembling molecules and their chem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d483647753dd359b9c492366211f1725
https://www.hzdr.de/publications/Publ-14946-1
https://www.hzdr.de/publications/Publ-14946-1
Autor:
W. Bartsch, R. Kaltschmidt, U. Weinert, D. Stephani, Peter Friedrichs, K.O. Dohnke, H. Mitlehner, Benno Weis
Publikováno v:
11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).
We have developed a novel structure for a fully implanted, normally-on vertical junction field effect transistor (VJFET) and fabricated prototypes with blocking voltages between 600 and 1000 V. Mounting the SiC VJFET together with a 50 V Si MOSFET on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19e9e23ebb634f7c9e19c9b3dffa4ed6
https://doi.org/10.1109/ispsd.1999.764129
https://doi.org/10.1109/ispsd.1999.764129
Autor:
Benno Weis, R. Schorner, Peter Friedrichs, U. Weinert, Dethard Peters, H. Mitlehner, D. Stephani
Publikováno v:
Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).
4H-SiC p-n diodes with an active area of 1 mm/sup 2/ and up to 3 kV blocking voltage have been fabricated, characterized and compared to simulations. The static forward characteristics demonstrate the expected forward power loss with a negative tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16f1d46d37c79190827965b55cf90e96
https://doi.org/10.1109/ispsd.1998.702652
https://doi.org/10.1109/ispsd.1998.702652
Publikováno v:
Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.
Silicon carbide power devices offer important advantages compared to silicon devices, regarding higher power ratings at clearly reduced static and dynamical losses, better reliability because of possible higher operating temperatures, and significant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2789f55bac1d092a3f770753f3c3f91
https://doi.org/10.1109/ispsd.1997.601461
https://doi.org/10.1109/ispsd.1997.601461
Autor:
U. Weinert, R. Schorner, E. Baudelot, Dethard Peters, Peter Friedrichs, K.O. Dohnke, H. Mitlehner, D. Stephani
Publikováno v:
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).
Silicon carbide switching devices exhibit superior properties compared to silicon devices. Low specific on-resistance for high breakdown voltages is believed to be the most outstanding feature of SiC power switching devices. In this paper, MOSFETs an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79ea757ab358bfed5ecff79260a1a7a9
https://doi.org/10.1109/ispsd.2000.856809
https://doi.org/10.1109/ispsd.2000.856809
Autor:
H. Mitlehner, D. Stephani, Benno Weis, U. Weinert, Peter Friedrichs, R. Schoerner, Dethard Peters
Publikováno v:
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).
New results of silicon carbide p-n diodes show a promising performance for high voltage applications. The diodes are characterized by high power ratings, temperature stability, rugged avalanche and fast switching behavior. Significant savings in syst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0491bf0e236151867f852afe1174c314
https://doi.org/10.1109/ispsd.2000.856816
https://doi.org/10.1109/ispsd.2000.856816
Autor:
Bernie D. Shizgal, U. Weinert
Publikováno v:
Planetary and Space Science. 35:199-207
The departure of a one-component planetary atmosphere from hydrostatic equilibrium is studied with a new moment method of solution of the nonlinear Boltzmann equation. The velocity distribution function of atmospheric particles is expanded in a set o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e5442d1e8b920bc29bdc5d2cf2df5f6
https://doi.org/10.1016/0032-0633(87)90089-4
https://doi.org/10.1016/0032-0633(87)90089-4
Autor:
U. Weinert, E. A. Mason
Publikováno v:
Physical Review A. 21:681-690
A hierarchy of generalized Nernst-Einstein relations is derived that gives relations among the higher-order transport coefficients that describe nonlinear mobility and non-Fickian diffusion. The results are valid for the case where the transported sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac49017f17da65e18aa36522d550ec6b
https://doi.org/10.1103/physreva.21.681
https://doi.org/10.1103/physreva.21.681
Publikováno v:
Physical Review A. 22:2262-2269
A moment method is used to obtain exact solutions of the nonlinear Boltzmann equation for the relaxation to equilibrium of a spatially uniform gas of Maxwell-model molecules. The results contradict a recent conjecture of Krook and Wu concerning simil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38de979fe257f54b0e86ecfb53e9d881
https://doi.org/10.1103/physreva.22.2262
https://doi.org/10.1103/physreva.22.2262