Zobrazeno 1 - 10
of 57
pro vyhledávání: '"U. V. Desnica"'
Autor:
P. Dubček, Uğur Serincan, Zdravko Siketić, Maja Buljan, I. Bogdanović Radović, Rasit Turan, U. V. Desnica, Sigrid Bernstorff
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 249:843-846
Ge quantum dots embedded in SiO 2 have been obtained by implantation of Ge ions in the 10 16 –10 17 cm −2 dose range, followed by post-implantation annealing in the temperature range T a = 300−1000 °C. Using Rutherford back-scattering, grazing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a429bbb5341fb35d49f0c42f1a9403d6
https://doi.org/10.1016/j.nimb.2006.03.151
https://doi.org/10.1016/j.nimb.2006.03.151
Autor:
P. Dubček, U. V. Desnica, Mark C Ridgway, Christopher Glover, Sigrid Bernstorff, I.D. Desnica-Frankovic
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 249:114-117
Grazing incidence small angle scattering of X-rays (GISAXS) was used to analyze structural modifications in implantation-damaged Ge. Samples were implanted by different doses of 74 Ge, from 3 × 10 12 cm −2 to 3 × 10 16 cm −2 ; at room- or liqui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d4032c14af2ff623ccf7c2386a4a7b0
https://doi.org/10.1016/j.nimb.2006.03.093
https://doi.org/10.1016/j.nimb.2006.03.093
Publikováno v:
Journal of Electronic Materials. 32:1100-1106
The photocurrent transients, IPC(t), were studied in semi-insulating (SI) GaAs during a low-temperature (low-T) illumination. Unusual transients were explained by the model, relating IPC(t) to the deep levels/traps and their occurpancy. Such traps we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::729f477add6ec91957307a5245ad93ea
https://doi.org/10.1007/s11664-003-0094-2
https://doi.org/10.1007/s11664-003-0094-2
Publikováno v:
Vacuum. 71:153-158
A simplified setup for thermoelectric effect spectroscopy (TEES) was introduced. This was applied for measurements on semi-insulating GaN, grown on a sapphire substrate in order to investigate deep level traps. TEES currents were found to be negative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e716c6ac28626c301edf229fe5edce80
https://doi.org/10.1016/s0042-207x(02)00730-3
https://doi.org/10.1016/s0042-207x(02)00730-3
Publikováno v:
Vacuum. 67:451-455
The reflectivity (R) in the UV–visible range was used to study CdS nanocrystals obtained by implantation of Cd and S ions into SiO2 and subsequent annealing (Ta=300–900°C). We demonstrate that such an analysis can give very useful information ab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7077a7479f7202f5b31f7f6b7e658d2
https://doi.org/10.1016/s0042-207x(02)00230-0
https://doi.org/10.1016/s0042-207x(02)00230-0
Publikováno v:
Journal of Non-Crystalline Solids. :1100-1104
We present a systematic study of the influence of ion dose and post-implantation annealing on the synthesis and growth of CdS nanocrystals in a SiO{sub 2} matrix. Nanocrystals were obtained after implantation of monoenergetic Cd and S ions and subseq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d786536e906849a92d0f057ce0f82a3
https://doi.org/10.1016/s0022-3093(02)00941-9
https://doi.org/10.1016/s0022-3093(02)00941-9
Publikováno v:
Journal of Electronic Materials. 28:L27-L30
The role of contacts in characterization of traps in semi-insulating (SI) GaAs by thermally stimulated current (TSC) methods has been demonstrated by comparing alloyed In and soldered In contacts. Alloyed In contacts, which have an ohmic characterist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::107d193c3fbb8ca1a98c459909d48e14
https://doi.org/10.1007/s11664-999-0255-z
https://doi.org/10.1007/s11664-999-0255-z
Autor:
U. V. Desnica, M. Pavlović
Publikováno v:
Journal of Applied Physics. 84:2018-2024
The new analytical method, simultaneous multiple peak analysis (SIMPA) which comprises simultaneous fitting of whole measured thermally stimulated current (TSC) spectra is presented. The procedure clearly resolves contributions from various overlappi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::770b9363de1a0224e3a5ec799dbbe3e1
https://doi.org/10.1063/1.368258
https://doi.org/10.1063/1.368258
Publikováno v:
Physical Review B. 55:16205-16216
Disorder was introduced into GaAs by implantation of $^{30}\mathrm{Si}^{+}$ions, using a very wide range of ion doses, dose rates, and implant temperatures, and studied by Raman scattering (RS) and Rutherford backscattering ion channeling (RBS). RS s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2aa3af5ac08f63f32b9042237f2bdb4c
https://doi.org/10.1103/physrevb.55.16205
https://doi.org/10.1103/physrevb.55.16205
Publikováno v:
Journal of Molecular Structure. :249-252
Thermal and photo-induced annealing was performed on different samples of amorphous silicon. The structural changes were monitored by Raman spectroscopy by means of the frequency shift and change in width of the TO-like phonon band of a-Si. While the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ce69e5f131a81568d3b82650bc1a3c4
https://doi.org/10.1016/s0022-2860(96)09579-8
https://doi.org/10.1016/s0022-2860(96)09579-8