Zobrazeno 1 - 10
of 84
pro vyhledávání: '"U. Tisch"'
Publikováno v:
Journal of Physics D: Applied Physics. 38:A239-A244
A novel simulation program in the MATLAB format for x-ray diffraction profiles in multilayers was developed, which can be applied to any multilayered structure with no limitations. The simulation algorithm (nickname DIWAS) is based on direct summatio
Publikováno v:
physica status solidi (c). 1:1554-1559
We report on the atypical temperature evolution of the phonon modes in undoped, pseudomorphic GaAs1−xNx layers, 0 ≤ x ≤ 4.2%, on GaAs substrates. The modes were characterized by micro-Raman backscattering for temperatures ranging from 90 to 430
Publikováno v:
physica status solidi (a). 195:528-531
In this work, the composition dependence of the fundamental bandgap of thin, pseudomorphic GaAs 1-x N x layers (0 < x ≤ 5%) on GaAs substrates is studied, using high resolution X-ray diffraction and optical transmission. A very large set of consist
Publikováno v:
physica status solidi (a). 188:789-792
Contrary to the well established band gap of GaN, widely varying values are reported for Al x Ga 1-x N thin layers. The large difference is related to different growth techniques, conditions, and misinterpretation of the measured values. A solution o
Publikováno v:
Journal of Electronic Materials. 29:457-462
Thin GaN films, grown by metal organic chemical vapor deposition on the basal plane of sapphire substrates, were characterized by x-ray pole figures, high-resolution x-ray diffraction and transmission electron microscopy. This combination was found s
Autor:
Leeor Kronik, Ilan Shalish, Yossi Rosenwaks, U. Tisch, Yoram Shapira, G. Segal, Joseph Salzman
Publikováno v:
Physical Review B. 59:9748-9751
The deep level energy distribution associated with the well-known ‘‘yellow luminescence’’ in GaN is studied by means of two complementary deep level techniques: photoluminescence and surface photovoltage spectroscopy. The combined experimenta
Autor:
S. Mesters, S. Mantl, W. Michelsen, Bernd Kabius, Bernhard Holländer, M. Hacke, D. Guggi, U. Tisch
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :324-327
Single crystalline metal/silicon heterostructures, such as CoSi 2 on Si (100), are promising materials for microelectronic and optoelectronic applications. The crystalline perfection of epitaxial CoSi 2 /Si (100) heterostructures is limited by the la
Publikováno v:
Applied Physics Letters. 81:463-465
The composition dependence of the fundamental bandgap of thin, pseudomorphic GaAs1−xNx layers (0⩽x⩽5%) on GaAs substrates is studied by optical transmission measurements and high resolution x-ray diffraction. We present a very large set of cons
Autor:
E. Finkman, R. Intartaglia, Thierry Taliercio, Pierre Valvin, Pierre Lefebvre, U. Tisch, Thierry Guillet, Bernard Gil, Eric Tournié, J. Salzman, Thierry Bretagnon, M.-A. Pinault
Publikováno v:
IEE Proceedings-Optoelectronics.
E-MRS Spring Meeting
E-MRS Spring Meeting, European Materials Society, May 2004, Strasbourg, France. pp.365, ⟨10.1049/ip-opt:20040867⟩
E-MRS Spring Meeting
E-MRS Spring Meeting, European Materials Society, May 2004, Strasbourg, France. pp.365, ⟨10.1049/ip-opt:20040867⟩
International audience; Low-temperature time-resolved photoluminescence (TR-PL) experiments were used to study the dependence on nitrogen composition of the nature, the energy and the dynamics of radiative carrier recombinations in GaAs1-xNx alloys.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6361599435eed027ebf3b5cca3980e9
https://hal.archives-ouvertes.fr/hal-01310044
https://hal.archives-ouvertes.fr/hal-01310044
Autor:
U. Tisch, Joseph Salzman, Thierry Bretagnon, Bernard Gil, Eric Tournié, Pierre Lefebvre, Eliezer Finkman, M.-A. Pinault, M. Laügt, Thierry Taliercio, Romuald Intartaglia
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2004, 69 (7), pp.073303.1-073303.4. ⟨10.1103/PhysRevB.69.073303⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2004, 69 (7), pp.073303.1-073303.4. ⟨10.1103/PhysRevB.69.073303⟩
The composition dependence of the band-gap reduction of ${\mathrm{GaAs}}_{1\ensuremath{-}x}{\mathrm{N}}_{x}$ grown by molecular beam epitaxy and metal organic vapor phase epitaxy was investigated using transmission, reflection, and low-temperature ph