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Autor:
Conrad Burri
Publikováno v:
Das Polarisationsmikroskop ISBN: 9783034840507
Die optische Indikatrix eines Kristalls ist im allgemeinen Fall ein dreiachsiges Ellipsoid. Durch eine beliebige Ebene, z.B. diejenige eines Dunnschliffs, wird sie allgemein in einer Ellipse geschnitten. Die orthoskopischen Methoden gestatten, die Or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b68cc977386d60c40e17012bdfc88c2e
https://doi.org/10.1007/978-3-0348-4123-8_8
https://doi.org/10.1007/978-3-0348-4123-8_8
Publikováno v:
Contributions to Mineralogy and Petrology; March 1970, Vol. 29 Issue: 1 p74-75, 2p
Autor:
Allegretto, Juan A.1 (AUTHOR) juan.allegretto@dp-uni.ac.at, Dostalek, Jakub1,2 (AUTHOR) jakub.dostalek@dp-uni.ac.at
Publikováno v:
Advanced Science. 8/14/2024, Vol. 11 Issue 30, p1-26. 26p.
Publikováno v:
Journal of Physics D: Applied Physics. 38:A239-A244
A novel simulation program in the MATLAB format for x-ray diffraction profiles in multilayers was developed, which can be applied to any multilayered structure with no limitations. The simulation algorithm (nickname DIWAS) is based on direct summatio
Publikováno v:
physica status solidi (c). 1:1554-1559
We report on the atypical temperature evolution of the phonon modes in undoped, pseudomorphic GaAs1−xNx layers, 0 ≤ x ≤ 4.2%, on GaAs substrates. The modes were characterized by micro-Raman backscattering for temperatures ranging from 90 to 430
Publikováno v:
physica status solidi (a). 195:528-531
In this work, the composition dependence of the fundamental bandgap of thin, pseudomorphic GaAs 1-x N x layers (0 < x ≤ 5%) on GaAs substrates is studied, using high resolution X-ray diffraction and optical transmission. A very large set of consist
Autor:
Liu X; Lab of Nanomedicine and Omic-based Diagnostics, Institute of Analytical Chemistry, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China., Chen Q; Lab of Nanomedicine and Omic-based Diagnostics, Institute of Analytical Chemistry, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China.; Will-think Sensing Technology Co., LTD, Hangzhou, 310030, China., Xu S; Lab of Nanomedicine and Omic-based Diagnostics, Institute of Analytical Chemistry, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China., Wu J; Lab of Nanomedicine and Omic-based Diagnostics, Institute of Analytical Chemistry, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China., Zhao J; Lab of Nanomedicine and Omic-based Diagnostics, Institute of Analytical Chemistry, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China., He Z; Department of Thoracic Surgery, Sir Run Run Shaw Hospital, School of Medicine, Zhejiang University, Hangzhou, 310016, China., Pan A; Department of Internal Medicine, The Second Affiliated Hospital of Zhejiang University, Hangzhou, 310003, China., Wu J; Lab of Nanomedicine and Omic-based Diagnostics, Institute of Analytical Chemistry, Department of Chemistry, Zhejiang University, Hangzhou, 310058, China.
Publikováno v:
Advanced science (Weinheim, Baden-Wurttemberg, Germany) [Adv Sci (Weinh)] 2024 Jul 04, pp. e2401695. Date of Electronic Publication: 2024 Jul 04.
Publikováno v:
physica status solidi (a). 188:789-792
Contrary to the well established band gap of GaN, widely varying values are reported for Al x Ga 1-x N thin layers. The large difference is related to different growth techniques, conditions, and misinterpretation of the measured values. A solution o