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pro vyhledávání: '"U. T. Davlatov"'
Autor:
F. Kh. Khasanov, I. B. Sapaev, B. S. Mirzaev, Q. A. Shakarov, U. T. Davlatov, N. N. Abdusattorov
Publikováno v:
2021 ASIA-PACIFIC CONFERENCE ON APPLIED MATHEMATICS AND STATISTICS.
Publikováno v:
Technical Physics Letters. 27:319-322
The spectral and current-voltage (I–V) characteristics of Si-Si1−xGex heterostructures grown by liquid phase epitaxy on silicon substrates were studied. The dependence of the longwave photosensitivity boundary of these structures on the variband