Zobrazeno 1 - 10
of 40
pro vyhledávání: '"U. Sudarsan"'
Publikováno v:
Journal of Materials Science. 26:2309-2312
Defect structures in excimer laser-assisted epitaxial GaP on (1 0 0) GaP and (1 0 0) GaAs have been examined using transmission electron microscopy (TEM). It was found that the dominant defect structures in homo-epitaxy were dislocations and stacking
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f863e6304d3c67296bdfc29ab3c3402
https://doi.org/10.1007/bf01130174
https://doi.org/10.1007/bf01130174
Publikováno v:
Journal of Crystal Growth. 106:643-650
Relationship between the flow rates of the precursor gases and the composition of In1−xGaxAs epilayers on InP has been examined. Based on experimental data a linear model has been developed to predict this relationship. This model has been used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c43c805f45d9b214d39fa15a79e1895
https://doi.org/10.1016/0022-0248(90)90038-m
https://doi.org/10.1016/0022-0248(90)90038-m
Autor:
U. Sudarsan, Raj Solanki
Publikováno v:
Journal of Applied Physics. 67:2913-2918
Periodic structures have been obtained during nominally unpolarized excimer laser (ArF)‐assisted organometallic vapor phase epitaxy of GaP on GaAs. Both crystalline properties and chemical composition of these structures have been examined. The che
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1b5cfa060ba978926d1513a5a0666c5
https://doi.org/10.1063/1.345409
https://doi.org/10.1063/1.345409
Autor:
U. Sudarsan, Rajendra Solanki
Publikováno v:
Rapid Thermal and Laser Processing.
Laser-assisted epitaxial growth of III-V semiconductors has been achieved using both pyrolytic and photolytic reactions. A focused beam from an argon laser operating at 514.5 nm was used to 'direct-write' epitaxial microstructures using the pyrolytic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a5ae9cdeaafdec8ffb24d4c5eb29bea
https://doi.org/10.1117/12.142094
https://doi.org/10.1117/12.142094
Publikováno v:
Journal of Materials Research. 3:1144-1150
Ultraviolet photon-induced metalorganic vapor phase epitaxy of CdTe films on GaAs substrates has been investigated using diethyltelluride and dimethylcadmium as the precursor gases. The relationship between the deposition parameters and the propertie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12a323d6f8b0f2c02af84d77a9f6f632
https://doi.org/10.1557/jmr.1988.1144
https://doi.org/10.1557/jmr.1988.1144
Publikováno v:
Journal of Superconductivity. 1:3-19
Measurements of supercurrent transport and current density in explosively fabricated superconducting prototypes have been erratic, with current densities measured to be in excess of 103 A/cm2. This erratic behavior appears to be related to the degree
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::692adadfde684f65a6374a15b4559b89
https://doi.org/10.1007/bf00617947
https://doi.org/10.1007/bf00617947
Publikováno v:
Journal of Applied Physics. 66:449-452
Ultraviolet photon‐assisted metalorganic vapor‐phase epitaxy has been used to grow CdTe, followed by Hg1−x Cdx Te on GaAs/Si substrates at 250 °C in order to fabricate Hg1−xCdxTe/CdTe/GaAs/Si structures. For Hg1−xCdx Te growth methylallylt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae3aa7422b66922fc8cfc956c637fe5e
https://doi.org/10.1063/1.343847
https://doi.org/10.1063/1.343847
Autor:
T. Monson, D. G. Brasher, N. G. Eror, A.W. Hare, Jafar Javadpour, D. J. Butler, U. Sudarsan, M. Strasik, Lawrence E Murr
Publikováno v:
Scopus-Elsevier
Scanning and transmission electron microscopy (including electron diffraction) have been applied to examine the consolidation, bonding, and characterization of orthorhombic, superconducting YBa2Cu3O7 powder particles in explosive (shock-wave) fabrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::411929b530278f87b7cf0c7fa93af892
https://doi.org/10.1007/bf03258007
https://doi.org/10.1007/bf03258007
Publikováno v:
Journal of Applied Physics. 65:1932-1935
Homoepitaxy of CdTe using ultraviolet photon‐assisted metalorganic vapor‐phase epitaxy has been investigated at 250 °C with dimethylcadmium and diethyltellurium as the precursor gases. Empirical relationships between film properties and the depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03eee4cf2e817c7257de026b37c99f09
https://doi.org/10.1063/1.342880
https://doi.org/10.1063/1.342880
Publikováno v:
Journal of Materials Research. 3:825-829
Excimer laser-induced sputtering of YBa2Cu3O7−x targets has been investigated. Two aspects of this process are reported here: the spectral content of the emission and sputtering of the target. Postsputtering analysis of the sputtered area of the ta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::104fa0b016fa9de77122ec3dcb2b72d1
https://doi.org/10.1557/jmr.1988.0825
https://doi.org/10.1557/jmr.1988.0825