Zobrazeno 1 - 10
of 65
pro vyhledávání: '"U. Streller"'
Publikováno v:
Applied Surface Science. 136:331-337
An XPS study of GaAs wafers etched by exposure to vacuum ultraviolet light in a Cl 2 atmosphere reveals a strong wavelength dependence of the desorption of reaction products. While the etching depth is not influenced by shifting the cut-off wavelengt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9cf6683a44ebb4b00aedf3a9e474424
https://doi.org/10.1016/s0169-4332(98)00357-2
https://doi.org/10.1016/s0169-4332(98)00357-2
Publikováno v:
Superlattices and Microstructures. 23:445-451
Light-induced dry etching of Si(100) in the VUV range using synchrotron radiation (SR) and a halogen-containing gas (XeF2) has been investigated with respect to selectivity, anisotropy, quantum efficiency, optimal wavelength, spatial resolution and q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11f3eb17b7d0f8130b3d1efabd52154c
https://doi.org/10.1006/spmi.1996.0356
https://doi.org/10.1006/spmi.1996.0356
Publikováno v:
Applied Surface Science. :442-448
Light induced dry etching using synchrotron radiation (SR) in the VUV range and chlorine as etching gas has been applied to metals (Cu) and semiconductors (GaAs). High quality replica of a mask are etched by irradiation with filtered radiation and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ca4b87f5b413b00d0d3ff06783ec43b
https://doi.org/10.1016/s0169-4332(96)00918-x
https://doi.org/10.1016/s0169-4332(96)00918-x
Publikováno v:
Applied Surface Science. 106:341-346
Replica of a mask were etched in Si(100) wafers with a sub-micrometer lateral resolution by VUV irradiation using XeF2. A high selectivity is achieved if the spontaneous reaction of XeF2 is suppressed by a buffer gas and if the unselective light indu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b507ec086074d182a27e5eae684d910
https://doi.org/10.1016/s0169-4332(96)00396-0
https://doi.org/10.1016/s0169-4332(96)00396-0
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 80:49-54
Light induced dry etching of metals (Cu) and semiconductors (GaAs, Si) using synchrotron radiation (SR) in the VUV range and halogen containing gases (Cl 2 , XeF 2 ) has been investigated and the conditions for selective and anisotropic etching are d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b8d4a1628425028d4f5baa36ede2057
https://doi.org/10.1016/0368-2048(96)02920-9
https://doi.org/10.1016/0368-2048(96)02920-9
Publikováno v:
Applied Surface Science. :448-452
The photon-induced dry etching of Si(100) using synchrotron radiation (SR) in the VUV range and a halogen containing gas (XeF 2 ) has been investigated. Replica of a mask are etched in Si wafers with a sub-micrometer lateral resolution by irradiation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0ff98ac0050be5e70f6cb6cb0b52081
https://doi.org/10.1016/0169-4332(95)00456-4
https://doi.org/10.1016/0169-4332(95)00456-4
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 97:412-415
The selectivity and anisotropy of dry etching using synchrotron radiation (SR) in the vacuum ultraviolet (VUV) range (100 nm≤ λ ≤ 300 nm) has been investigated for semiconductors (GaAs, Si) in different etching gas atmospheres (Cl2, XeF2). For G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::969f1ed135c20f52f14a58532560ce19
https://doi.org/10.1016/0168-583x(94)00735-7
https://doi.org/10.1016/0168-583x(94)00735-7
Autor:
U. Streller, J. Griesche, Karin Jacobs, A Schutzgen, H. Babucke, N. Hoffmann, Fritz Henneberger
Publikováno v:
Semiconductor Science and Technology. 10:201-207
ZnSe/ZnMnSe MQW structures are grown by MBE. In situ RHEED control allows one to lock the growth cycle on the phase of the RHEED oscillations so that lattice plane completion is achieved independent of beam flux fluctuations and other irregularities.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cb69e7f79d14fa7b94fcda3133ff4c0
https://doi.org/10.1088/0268-1242/10/2/014
https://doi.org/10.1088/0268-1242/10/2/014
Autor:
Nikolaus Schwentner, B. Li, I. Twesten, U. Streller, H.-P. Krause, Yu. Poltoratskii, V. Stepanenko
Publikováno v:
Applied Surface Science. 86:577-581
Quantum efficiency for etching corresponding to the removal of more than 50 Ga and As atoms per incident photon is observed in the spectral range from 115 to 130 nm, which exceeds the values at long wavelengths by four orders of magnitude. Replica of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ecb2f3d3a7174d413b6af79615e7eb2
https://doi.org/10.1016/0169-4332(94)00465-x
https://doi.org/10.1016/0169-4332(94)00465-x
Publikováno v:
Journal of Applied Physics. 77:350-356
Replicas of a mask are etched in Si wafers with a micrometer lateral resolution and typical depths of 200 nm by irradiation with filtered synchrotron radiation using cutoff wavelengths of 105, 122, and 150 nm. An excellent selectivity and anisotropy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97ab09e400415a19ed71113fdf9c0fa1
https://doi.org/10.1063/1.359329
https://doi.org/10.1063/1.359329