Výsledky vyhledávání - "U. S. Prosolovich"

The influence of uncontrolled technological impurities on the temperature dependence of the gain coefficient of a bipolar n-p-n-transistor

Autor: V. Yu. Yavid, V. B. Odzaev, D. V. Shestovski, V. A. Pilipenko, U. S. Prosolovich, Yu.N. Yankovski, V. A. Filipenia, A. N. Pyatlitski

Publikováno v: Proceedings of the National Academy of Sciences of Belarus. Physics and Mathematics Series. 57:232-241

Herein, the temperature dependences of the static current gain (β) of bipolar n-p-n-transistors, formed by similar process flows (series A and B), in the temperature range 20–125 °С was investigated. The content of uncontrolled technological imp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f20e30dc08112612da881c7ca309ddf5
https://doi.org/10.29235/1561-2430-2021-57-2-232-241

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