Zobrazeno 1 - 10
of 20
pro vyhledávání: '"U. S. Joshi"'
Autor:
Rutvi J. Pandya, Sushant Zinzuvadiya, Nisha Thankachen, Poornima Sengunthar, Shivangi S. Patel, A. K. Debnath, U. S. Joshi
Publikováno v:
AIP Advances, Vol 10, Iss 7, Pp 075319-075319-8 (2020)
Lead-free all oxide composite thin films comprising ferromagnetic (FM) and ferroelectric (FE) phases are observed as promising candidates for multifunctional device applications. A series of composites having systematic replacement of FM La0.67Sr0.33
Externí odkaz:
https://doaj.org/article/49f68d19146745208a099cd23044f5c1
Autor:
Chiranjit Karmakar, R. K. Kaneriya, Megha Malasi, Shivam Rathod, Devendra Kumar, Sujay Chakravarty, R. B. Upadhyay, Punam Kumar, A. N. Bhattacharya, U. S. Joshi
Publikováno v:
Applied Physics Letters. 122
Quantum transport properties of a large bandgap In0.15Al0.79Ga0.06N/GaN quaternary GaN high electron mobility transistor (HEMT) heterostructure are studied at low temperatures up to 2 K. Herein, we report the first evidence of weak localization in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9a7561950ddc9a98af37a0815e22e4a
https://doi.org/10.1063/5.0142605
https://doi.org/10.1063/5.0142605
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:6432-6445
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43a51c7122ef581187eb95e11ce8b955
https://doi.org/10.1007/s10854-022-07815-8
https://doi.org/10.1007/s10854-022-07815-8
Publikováno v:
Physica Scripta. 98:035829
Resistive switching (RS) behavior in mixed oxide insulators has shown a great promise as memristors or non-volatile resistive random-access memory (RRAM) applications. For dilute magnetic oxide multilayers, a novel approach of controlled defects indu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ef50db7776856cd88cae32941543c26
https://doi.org/10.1088/1402-4896/acbb3e
https://doi.org/10.1088/1402-4896/acbb3e
Autor:
Nisha Thankachen, Bhargav Y. Pathak, Rutvi J. Pandya, U. V. Chhaya, A. K. Debnath, U. S. Joshi
Publikováno v:
Journal of Vacuum Science & Technology A. 41:013403
Multiferroicity in the type II multiferroic spin chain Ca3CoMnO6 (CCMO) thin films critically depends upon Co/Mn ratio. We intended to disturb this ratio to find its implications on its physical properties. Polycrystalline thin films of pure and dilu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1740ffe55e70c6a2f5fd91f8f69a26e
https://doi.org/10.1116/5.0118975
https://doi.org/10.1116/5.0118975
Publikováno v:
AIP Conference Proceedings.
Ba0.6 Sr0.4 TiO3 thin films are potential candidates for ferroelectric devices like Dynamic Random Access Memory (DRAM), microwave tunable devices, uncooled infrared detectors etc. For all such applications it is highly desirable to have BST film wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a09bd5d88a851a2a6ddee7a72220cac
https://doi.org/10.1063/1.4982079
https://doi.org/10.1063/1.4982079
Autor:
U. S. Joshi, S. J. Trivedi
Publikováno v:
Journal of Nano- and Electronic Physics. 9:01025-1
Fe doped SnO2 transparent thin film nanostructures were grown by chemical solution deposition and its electric field induced resistive switching properties were investigated for non-volatile resistive random access memory (RRAM) applications. Simple,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6fe25158aa8066063afe812a0974f02
https://doi.org/10.21272/jnep.9(1).01025
https://doi.org/10.21272/jnep.9(1).01025
Publikováno v:
Superconductor Science and Technology. 8:143-147
We have investigated the influence of the incorporation of V ions with Cu ions on the structural features of the YBa2Cu3O7- delta superconductor by Rietveld refinement of neutron diffraction patterns of two YBa2(Cu1-xVx)3O7- delta samples with (sampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f01a2040212dfb52a59e634c4d322307
https://doi.org/10.1088/0953-2048/8/3/002
https://doi.org/10.1088/0953-2048/8/3/002
Autor:
Jaydip Mistry, B. V. Mistry, U. N. Trivedi, R. Pinto, U. S. Joshi, Alka B. Garg, R. Mittal, R. Mukhopadhyay
Publikováno v:
AIP Conference Proceedings.
Transparent all oxide p‐n junction thin film diode nanostructures consisting of n‐type ZnO:Al and p‐type NiO was fabricated by pulsed laser deposition onto c‐sapphire substrate. Details of device fabrication will be presented. Combined GIXRD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ab3f9119447cd992a89520c328caa30
https://doi.org/10.1063/1.3606063
https://doi.org/10.1063/1.3606063
Publikováno v:
AIP Conference Proceedings.
Colossal electroresistance effects upon application of electric field in perovskite oxide Pr0.7Ca0.3MnO3 (PCMO) thin films, which is a promising candidate for resistance random access memory (RRAM) device have been investigated. Nanocrystalline PCMO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2731c76732cbb9f46a10c4f0b833593
https://doi.org/10.1063/1.3530530
https://doi.org/10.1063/1.3530530