Zobrazeno 1 - 10
of 49
pro vyhledávání: '"U. Rehse"'
Publikováno v:
Applied Mathematical Modelling. 35:1331-1336
In this paper, a novel method for calculation of island-size distribution in one-dimensional submonolayer epitaxial growth based on difference-differential rate equations is introduced. Moreover, precise analytic expressions for the first several Tay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c50e277ba3a91fed3c8aaf1249be38c
https://doi.org/10.1016/j.apm.2010.09.010
https://doi.org/10.1016/j.apm.2010.09.010
Autor:
D. Reinhardt, Natasha Dropka, U. Sahr, Wolfram Miller, Peter Rudolph, Frank Dr. Büllesfeld, U. Rehse, Olaf Klein
Publikováno v:
Journal of Crystal Growth. 318:275-279
During unidirectional solidification of multicrystalline (mc) silicon, the adjustment of controllable mixing patterns with high stirring efficiency can be obtained by application of a double-frequency travelling magnetic field (TMF). It is assumed th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60396959cc5e0234a1dbff8c4688b770
https://doi.org/10.1016/j.jcrysgro.2010.10.094
https://doi.org/10.1016/j.jcrysgro.2010.10.094
Publikováno v:
Journal of Crystal Growth. 318:1034-1038
Generally, well-tailored control of fluid flow is required for growing crystals with high uniformity of chemical composition. This is of particular importance in the case of layer growth, where both composition and thickness strongly depend on the ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3da4a187ae92e4ffded0f148f2f903c3
https://doi.org/10.1016/j.jcrysgro.2010.10.190
https://doi.org/10.1016/j.jcrysgro.2010.10.190
Publikováno v:
Journal of Crystal Growth. 312:1407-1410
Buoyancy-driven flow plays an important role in the solidification of multi-crystalline silicon in rectangular crucibles and has been subject of recent investigations (Miyazawa et al., 2008 [1,2] , Delannoy et al., 2007 [3] ). Though the driving forc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20ec41844bf537058dd408a2df66575e
https://doi.org/10.1016/j.jcrysgro.2009.09.016
https://doi.org/10.1016/j.jcrysgro.2009.09.016
Autor:
Christiane Lechner, Christiane Frank-Rotsch, Frank-M. Kießling, Olaf Klein, Jürgen Sprekels, Peter Rudolph, Peter Philip, U. Rehse, Pierre-Etienne Druet, Wolfram Miller
Publikováno v:
Journal of Crystal Growth. 310:1523-1532
We present numerical simulations of vapor pressure controlled (VCz) and liquid encapsulated Czochralski (LEC) crystal growth of GaAs under the influence of a traveling magnetic field (TMF) with melt diameters of approximately 6 in and melt heights of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b05f2289c68c6adcd1c696331b046a09
https://doi.org/10.1016/j.jcrysgro.2007.12.031
https://doi.org/10.1016/j.jcrysgro.2007.12.031
Publikováno v:
Journal of Crystal Growth. 266:60-66
Axisymmetric and 3D calculations of melt flow have been performed for a configuration used at the vapour-pressure-controlled Czochalski growth of GaAs single crystals. Thermal boundary conditions were adapted from a global simulation of the temperatu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61ed834faef9898d88c8920ca0b2458a
https://doi.org/10.1016/j.jcrysgro.2004.02.030
https://doi.org/10.1016/j.jcrysgro.2004.02.030
Publikováno v:
Journal of Crystal Growth. 230:143-147
The flow in the GaAs and boron oxide melt in an equipment used for the vapour pressure controlled Czochralski (VCz) growth has been calculated. Two-dimensional-axisymmetric calculations have been performed by using the commercial general purpose prog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc8a14a459d0febc5ab32addb9ca84cc
https://doi.org/10.1016/s0022-0248(01)01325-2
https://doi.org/10.1016/s0022-0248(01)01325-2
Autor:
U. Rehse, Wolfram Miller
Publikováno v:
Crystal Research and Technology. 36:685-694
The influence of the melt flow on the temperature field and interface during the vapour-pressure-controlled growth of GaAs was studied numerically with the commercial general-purpose program FIDAP TM . The thermal boundary conditions for the domain o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6db5811b2dad4a5e80d94405fa843b82
https://doi.org/10.1002/1521-4079(200108)36:7<685::aid-crat685>3.0.co
https://doi.org/10.1002/1521-4079(200108)36:7<685::aid-crat685>3.0.co
Publikováno v:
Solid-State Electronics. 44:825-830
During the growth process of single bulk crystals from melt, the defect density is strongly affected by the shape of the melt/crystal interface. The shape of the interface is governed by the construction of the growth equipment including the heating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10dddd9c2b66a4647d88e48faf63360f
https://doi.org/10.1016/s0038-1101(99)00280-4
https://doi.org/10.1016/s0038-1101(99)00280-4
Publikováno v:
Crystal Research and Technology. 34:441-448
Steady-state simulations of fluid flow and temperature field are presented for an equipment that is used to grow Zinc Selenide single crystals from the gaseous phases via physical (PVT) or chemical vapour transport (CVT). Due to the horizontal arrang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edfce37d81c538725eb1a9d76336f30e
https://doi.org/10.1002/(sici)1521-4079(199904)34:4<441::aid-crat441>3.0.co
https://doi.org/10.1002/(sici)1521-4079(199904)34:4<441::aid-crat441>3.0.co