Dynamic modulation of the Fermi energy in suspended graphene backgated devices

Autor: U. Monteverde, James Sexton, Faisal H. Alqahtani, Omar M. Dawood, Rakesh K. Gupta, Hong-Yeol Kim, Max A. Migliorato, Robert J. Young, Mohamed Missous

Publikováno v: Migliorato, M, Monteverde, U, Dawood, O M D, Missous, M, Sexton, J, Kim, H Y, Alqahtani, F, Young, R & Kumar, R 2019, ' Dynamic modulation of the Fermi energy in suspended graphene backgated devices ', Science and Technology of Advanced Materials, vol. 20, no. 1, pp. 568-579 . https://doi.org/10.1080/14686996.2019.1612710
Science and Technology of Advanced Materials, Vol 20, Iss 1, Pp 568-579 (2019)
Science and Technology of Advanced Materials

Freestanding (suspended) graphene films, with high electron mobility (up to ~200,000 cm2V−1s−1), good mechanical and electronic properties, could resolve many of the current issues that are hampering the upscaling of graphene technology. Thus far

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5206f909f706960c98420e9632dcc530
https://www.research.manchester.ac.uk/portal/en/publications/dynamic-modulation-of-the-fermi-energy-in-suspended-graphene-backgated-devices(7d7e3a56-de76-4a73-8d21-962b9709b3ff).html

Ripples, phonons and bandgap in strained graphene

Autor: L. Britnell, Robert J. Young, Mohamed Missous, Omar M. Dawood, U. Monteverde, Max A. Migliorato, H-Y. Kim, Zheling Li, J. Pal

Publikováno v: 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).

Using a novel interatomic force field, called MMP, we study the morphology of Graphene layers under a variety of strain conditions. We report that strain induced ripples possess the “right” kind of elastic deformation that is necessary in order t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::65b3b169f214b03c093648202173044e
https://doi.org/10.1109/nusod.2015.7292849

A review of non linear piezoelectricity in semiconductors

Autor: U. Monteverde, Geoffrey Tse, Max A. Migliorato, Stephen J. Sweeney, H. Y. S. Al-Zahrani, J. Pal, Yuh-Renn Wu, Chi-Kang Li, Igor P. Marko, Benjamin G. Crutchley, R. Garg, Stanko Tomić

Publikováno v: AIP Conference Proceedings.

The piezoelectric effect in polar semiconductor has seen increased interest in recent years because of the prospect of exploiting semiconducting behavior and piezoelectric response, i.e. generating electric fields in response to pressure, in novel op

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::341cad868375234409b84465a6b50e9b
https://doi.org/10.1063/1.4870192

Atomistic modelling of elasticity and phonons in diamond and graphene

Autor: U. Monteverde, Max A. Migliorato, D. Powell

Publikováno v: 2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).

We present an atomistic interatomic potential that with a single set of parameters is able to accurately describe at the same time the elastic, vibrational and thermodynamics properties of semiconductors. We also show that the correct inclusion in th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d7e5b906c58caa52fddaef69d1b0099b
https://doi.org/10.1109/nusod.2013.6633133

Empirical interatomic potential for the mechanical, vibrational and thermodynamic properties of semiconductors

Autor: D. Powell, Max A. Migliorato, U. Monteverde

Publikováno v: Journal of Physics: Conference Series. 367:012015

Empirical models are widely used to simulate large atomic structures where instead ab initio methods are not practical because of computational limitations. However models such as Tersoff potential [8], [9], Valence Force Field [13], [14] or Stilling

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::086b8f052d10e17d1311ca7746ac319a
https://doi.org/10.1088/1742-6596/367/1/012015