Zobrazeno 1 - 1
of 1
pro vyhledávání: '"U. Merscheder"'
Publikováno v:
Microelectronic Engineering. 11:255-258
A RIE technique for the fabrication of sub-0.5 μm W absorber patterns has been developed based on a SF 6 /CH 3 /Ar gas system. Upon extensive optimization of particularly CHF 3 content and bias voltage precise pattern with vertical profiles can be e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9abd094702176f6ece91a78a757675e1
https://doi.org/10.1016/0167-9317(90)90109-7
https://doi.org/10.1016/0167-9317(90)90109-7
