Zobrazeno 1 - 10
of 39
pro vyhledávání: '"U. Menczigar"'
Autor:
U. Menczigar, Hermann G. Grimmeiss, Erich Kasper, Hartmut Presting, H. Kibbel, Gerhard Abstreiter, J. Olajos, M. Gail, Jesper Engvall
Publikováno v:
Semiconductor Science and Technology. 9:2011-2016
Interband optical transitions have been studied in a variety of short-period Si/Ge superlattice structures by means of photocurrent spectroscopy, infrared absorption, photo- and electroluminescence. Furthermore, the bandgap photoluminescence from str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee4f31152ba0a75137565cf721093c45
https://doi.org/10.1088/0268-1242/9/11s/026
https://doi.org/10.1088/0268-1242/9/11s/026
Autor:
Erich Kasper, U. Menczigar, Hermann G. Grimmeiss, Gerhard Abstreiter, Horst Kibbel, J. Olajos, Hartmut Presting
Publikováno v:
Physical Review B. 47:4099-4102
We report on band-gap luminescence in strain-symmetrized, (Si${)}_{\mathit{m}}$/(Ge${)}_{\mathit{n}}$ superlattices grown on a step-graded, alloy buffer with a reduced dislocation density, using Sb as a surfactant. The luminescence efficiency for a (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::436311a4269887e2bd3337e1ffa517e7
https://doi.org/10.1103/physrevb.47.4099
https://doi.org/10.1103/physrevb.47.4099
Publikováno v:
Journal of Crystal Growth. 127:443-446
The influence of growth conditions on the photoluminescence of SiGe quantum wells is presented. Growth temperatures above 600°C are found to be a prerequisite for a good layer quality. The variation of growth rates between 0.25 and 1 aA/s, however,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3f3096b93d569018c2a7bb149e4c08e
https://doi.org/10.1016/0022-0248(93)90657-i
https://doi.org/10.1016/0022-0248(93)90657-i
Autor:
Gerhard Abstreiter, Horst Kibbel, U. Menczigar, Erich Kasper, J. Brunner, Hartmut Presting, E. Friess, M. Gail
Publikováno v:
Thin Solid Films. 222:227-233
We report on photoluminescence studies of Si/Si1 − xGex quantum wells with systematically varied growth temperatures and well thicknesses. Well resolved band gap luminescence could be observed in quantum well structures grown at temperatures above
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95a3007bb2acd41dba983e77626d02d5
https://doi.org/10.1016/0040-6090(92)90074-l
https://doi.org/10.1016/0040-6090(92)90074-l
Autor:
Gerhard Abstreiter, J. Olajos, Hermann G. Grimmeiss, U. Menczigar, Horst Kibbel, Erich Kasper, Hartmut Presting, Jesper Engvall
Publikováno v:
Physical Review B. 46:12857-12860
We report an identification and determination of the band-gap energies in a series of strain-symmetrized ${\mathrm{Si}}_{\mathit{n}}$/${\mathrm{Ge}}_{\mathit{n}}$ superlattices. Absorption onsets are observed that shift toward higher energies with de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b93ccc6d5587ea874b91cddfc9a3172
https://doi.org/10.1103/physrevb.46.12857
https://doi.org/10.1103/physrevb.46.12857
Autor:
Milan Jaros, H. Kibbel, R M Turton, Gerhard Abstreiter, U. Menczigar, Hermann G. Grimmeiss, Hartmut Presting
Publikováno v:
Semiconductor Science and Technology. 7:1127-1148
Ultrathin SimGen (m monolayers (ML) Si, n ML Ge) strained layer superlattices (SLS) have been grown by molecular beam epitaxy. The optical properties of these structures depend on the concept of band-structure engineering by Brillouin zone folding an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64630860d003907218ad4ca88b79d122
https://doi.org/10.1088/0268-1242/7/9/001
https://doi.org/10.1088/0268-1242/7/9/001
Publikováno v:
Solid State Communications. 73:203-207
Confined optical phonons are investigated in short period (100) Si/Ge strained layer superlattices by Raman spectroscopy. The observed energies are closely related to the thickness of the corresponding Si and Ge slabs. The influence of the confinemen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51f958b9cc8012bd2a275f1088b5ed83
https://doi.org/10.1016/0038-1098(90)90958-e
https://doi.org/10.1016/0038-1098(90)90958-e
Publikováno v:
Applied Physics Letters. 67:3930-3932
Carrier recombination centers related with iron complexes in p‐type silicon are studied by microwave and light‐induced absorption techniques. Both thermal‐ and photoactivation are used to decompose iron–boron pairs and to study the impact on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e5724b386aeea7292cf6f5f6f96b5ed
https://doi.org/10.1063/1.114408
https://doi.org/10.1063/1.114408
Publikováno v:
Thin Solid Films. 222:27-29
We present photoluminescence studies of SiGe quantum wells with different well widths. Special attention is paid to the influence of growth conditions on the spectra. Growth temperatures above 600 °C are found to be a prerequisite for a good layer q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8807a0bceddfec383240fc87009c1963
https://doi.org/10.1016/0040-6090(92)90031-6
https://doi.org/10.1016/0040-6090(92)90031-6
Publikováno v:
Applied Physics Letters. 57:875-877
Short‐period strained‐layer α‐Sn/Ge superlattices lattice matched to Ge(001) substrates have been synthesized for the first time. The thin, tetragonally distorted α‐Sn layers are stabilized by a modified molecular beam epitaxy technique wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::566b1137cb9838b0ed107b495f9b0a99
https://doi.org/10.1063/1.104264
https://doi.org/10.1063/1.104264