Zobrazeno 1 - 10
of 32
pro vyhledávání: '"U. Mantz"'
Publikováno v:
Thin Solid Films. 414:246-250
Spectroscopic anisotropy micro-ellipsometry (SAME) is employed for a rapid and precise measurement of lateral dimensions of periodic structures showing form birefringence. For this, the ellipsometric parameters Δ and Ψ were measured as a function o
Autor:
U. Mantz, H.-J. Herzog, S. Ramminger, M. Förster, Horst Kibbel, Friedrich Schäffler, Rolf Sauer, Klaus Thonke
Publikováno v:
Journal of Applied Physics. 80:3017-3023
Comparative electroluminescence and photoluminescence measurements were performed on Si/Si0.7Ge0.3 p‐i‐n single quantum well structures, and on one p‐i‐n and one undoped multiple quantum well structure in a wide temperature range. The samples
Publikováno v:
Applied Surface Science. 102:314-318
MBE grown pseudomorphic Si 1−x Ge x Si (001) quantum wells (QW's) with germanium contents from 10% to 36% and various thicknesses were studied by photoluminescence (PL) under external stress applied parallel or perpendicular to the growth direction
Publikováno v:
Physical Review B. 50:15191-15196
We compare measured energy shifts of photoluminescence lines in Si/${\mathrm{Si}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ge}}_{\mathit{x}}$ quantum wells as a function of excitation power with theoretical calculations to conclude that the ban
Autor:
U. Mantz, H. Kibbel, H.-J. Herzog, Klaus Thonke, Rolf Sauer, Friedrich Schäffler, Erich Kasper
Publikováno v:
Thin Solid Films. 222:94-97
The electroluminescence (EL) and photoluminescence (PL) of ultrametastable Si 1− x Ge x layers grown by molecular beam epitaxy (MBE) on Si(100) substrates has been studied. Two layers 150 and 175 nm thick (samples B2005 and C0997 respectively) were
Publikováno v:
CLEO/Europe. 2005 Conference on Lasers and Electro-Optics Europe, 2005..
We investigated the effect of linewidth fluctuations and sidewall roughness on wavelength spectra in scatterometry using rigorous coupled wave analysis. For both cases the influence of mean values and fluctuations can be separated.
Publikováno v:
2004 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (IEEE Cat. No.04CH37530).
IR-SE metrology is an emerging technology in semiconductor production environment. Infineon Technologies SC300 started the first worldwide development activities for production applications. One application part of our IRSE development roadmap is sha
Autor:
J.-L. Stehle, P. Boher, P. Weidner, R. Wienhold, M. Bucchia, U. Mantz, P.-Y. Guittet, M. Rimane
Publikováno v:
Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI.
IRSE proposes a complementary type of characterization to widely accepted UV-VIS ellipsometry. IRSE is sensitive to absorption bands (vibrational and rotational states of molecules) and free carriers. IRSE reduces also sensitivity to scattering due t
Autor:
Paul Ronsheim, Huilong Zhu, Kam-leung Lee, Suryanarayan G. Hegde, P. Saunders, O. Dokumaci, U. Mantz, F. Cardone
Publikováno v:
International Conferencre on Simulation of Semiconductor Processes and Devices.
The diffusion of implanted boron in strained Si/Si/sub 1-x/Ge/sub x/ is investigated. A continuum segregation model (CSM) is presented to describe the phenomenon of B pile-up into the germanium profile. An analytic formula is obtained for Ge pre-amor
Publikováno v:
Scopus-Elsevier
A new metrology tool, Spectroscopic Anisotropy Micro-Ellipsometry (SAME) is introduced. The method allows for a rapid and precise measurement of lateral and vertical feature sizes of periodic structures showing form birefringence. Examples of CD (cri
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