Zobrazeno 1 - 10
of 143
pro vyhledávání: '"U. Konig"'
Autor:
M. Becker, B. Ritter, B. Doekemeijer, D. van der Hoek, U. Konigorski, D. Allaerts, J.-W. van Wingerden
Publikováno v:
Wind Energy Science, Vol 7, Pp 2163-2179 (2022)
In this paper, a new version of the FLOw Redirection and Induction Dynamics (FLORIDyn) model is presented. The new model uses the three-dimensional parametric Gaussian FLORIS model and can provide dynamic wind farm simulations at a low computational
Externí odkaz:
https://doaj.org/article/20dfa87fe7864c6789966fd233817bc9
Periodical
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Autor:
Jing Zhang, Rongqiang Li, Kaicheng Li, Peixin Qian, Yukui Liu, Daoguang Liu, Shiliu Xu, Yue Hao, Kaiquan He, Jun Xu, Zhengfan Zhang, H. Kibbel, G Chen, U Seiler, U. Konig, Z Liu, Rongkan Liu, Gangyi Hu, A. Gruhle, L Liu
Publikováno v:
ECS Transactions. 3:365-376
In this paper, a self-aligned SiGe/Si HBT was fabricated based on dry & wet etching, in which Si and SiGe materials were etched by KOH (potassium hydroxide) solution and SF6 (sulfur hexafluoride). The measured results are: cutoff frequency fT=103.3GH
Publikováno v:
physica status solidi (c). 2:3457-3460
Hydrogen separation from gas mixtures and purification are of great importance and interest. Technologies based on the use of metallic membranes are the most suitable ones for these purposes. Pd and its alloys with Ag, Au, Cu and Ni are the best cand
Autor:
L. Giguerre, Thomas Hackbarth, Bernhard Holländer, St. Lenk, Frédéric Aniel, H.-J. Herzog, M. Enciso, U. Konig, K.-H. Hieber, H. von Känel, Siegfried Mantl
Publikováno v:
Solid-State Electronics. 48:1921-1925
Strained-Si based SiGe MODFETs on ultra-thin SiGe virtual substrates prepared by molecular beam epitaxy (MBE) and helium implantation are presented and compared to similar devices on thick, compositionally graded virtual substrates grown by low energ
Autor:
Siegfried Mantl, Daniel Chrastina, Maura Rodríguez, H.-J. Herzog, U. Konig, Michael Oehme, M. Enciso Aguilar, Nicolas Zerounian, Thomas Hackbarth, Bernhard Holländer, H. von Känel, Frédéric Aniel, Giovanni Isella, Klara Lyutovich
Publikováno v:
Solid-State Electronics. 48:1443-1452
This paper reviews the RF and noise performance of strained Si heterostructure field-effect transistors. For SiGe n-HFETs the high RF figures of merit fT=90 GHz, fMAX=188 GHz and noise performance NFMIN=0.3 dB at 2.5 GHz demonstrate the capabilities
Autor:
W. Jeamsaksiri, V. Gaspari, C. Papavasilliou, J.E. Velazquez-Perez, U. Konig, Kristel Fobelets, Thomas Hackbarth, T. Vilches, K. Michelakis
Publikováno v:
Solid-State Electronics. 48:1401-1406
The measured performance of sub-micron Si:SiGe Schottky gated HFETs is compared to Si nMOSFETs. To allow an up-to-date comparison between Si and strained-Si FETs, the different device types have been studied in their respective technologies. RF perfo
Autor:
U. Konig, A. Vilches, D.G. Haigh, K. Michelakis, Christos Papavassiliou, Kristel Fobelets, T Hackbath
Publikováno v:
Solid-State Electronics. 48:1423-1431
In this paper, intrinsic device parameters, directly extracted from buried-channel n-HMODFET devices biased at micropower supply levels are presented. Sub-threshold region peaks in plots of intrinsic transit frequency and transconductance vs. bias cl
Autor:
Thomas Hackbarth, Hermann Schumacher, Thomas J. Brazil, P. Abele, Ingmar Kallfass, Breandan OhAnnaidh, M. Zeuner, U. Konig
Publikováno v:
Solid-State Electronics. 48:1433-1441
This paper presents a circuit-design oriented, large-signal model for n-channel SiGe MODFET transistors, its application to the design of mixer and amplifier MMICs as well as measurement results. The model is based on an equivalent circuit approach a
Autor:
A. Vilches, U. Konig, K. Michelakis, S. Despotopoulos, Thomas Hackbarth, Christos Papavassiliou, Kristel Fobelets
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 51:1100-1105
The recently published small-signal KAIST model is used successfully to fit the measured RF characteristics of a novel SiGe n-HMODFET device operating at micropower levels and extracted small-signal model parameters for this device under micropower o