Zobrazeno 1 - 5
of 5
pro vyhledávání: '"U. K. Klostermann"'
Publikováno v:
Journal of Physics D: Applied Physics. 34:2117-2122
Magnetic tunnel junctions in the sub-micrometre range have been patterned by electron beam lithography. The hard reference electrode is composed of an artificial antiferromagnetic subsystem while the soft magnetic detection layer is Permalloy (NiFe).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ada907c3767b209f284a2ce6046c969
https://doi.org/10.1088/0022-3727/34/14/306
https://doi.org/10.1088/0022-3727/34/14/306
Autor:
Günther Bayreuther, R. Kinder, U. K. Klostermann, Joachim Dr. Wecker, L. Bär, Joachim Bangert, G. Rupp
Publikováno v:
Journal of Magnetism and Magnetic Materials. 240:314-316
When magnetic tunnel junctions (MTJ) are built into a memory device they will be arranged in a matrix; therefore some of the not addressed elements will be exposed to a significant field during the switching of one element. It has to be avoided that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aabff249fe7222c7569ef3610a3af471
https://doi.org/10.1016/s0304-8853(01)00790-9
https://doi.org/10.1016/s0304-8853(01)00790-9
Autor:
L. Bär, Günter Reiss, H. Boeve, U. K. Klostermann, Joachim Bangert, Ralf Richter, Joachim Dr. Wecker
Publikováno v:
Journal of Magnetism and Magnetic Materials. 240:127-129
Spin-dependent tunnelling elements are widely studied due to their possible application in electronic devices. Here we focus on field programmable logic devices. We introduce the concepts and demonstrate experimentally the functionality of reprogramm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ef76b5cb63adced1530b02d969d692e
https://doi.org/10.1016/s0304-8853(01)00733-8
https://doi.org/10.1016/s0304-8853(01)00733-8
Publikováno v:
SPIE Proceedings.
In this paper, we discuss the performance of EUV resist models in terms of predictive accuracy, and we assess the readiness of the corresponding model calibration methodology. The study is done on an extensive OPC data set collected at IMEC for the S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44e8321b531aef3fd19e2351374df295
https://doi.org/10.1117/12.846549
https://doi.org/10.1117/12.846549
Autor:
G. Miiller, M. Ruhrig, F. Dahmani, Michael Kund, U. K. Klostermann, Franz Kreupl, U. Griming, M. Angerbauer
Publikováno v:
2007 IEEE International Electron Devices Meeting.
We report on a novel spin torque select MRAM with perpendicular anisotropy (P-ST-MRAM). The P-ST concept offers superior scalability performance at the 28 nm technology node compared to the conventional in-plane spin torque MRAM (I-ST-MRAM). The crit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c351164521a7f36f61284c73a3d2f584
https://doi.org/10.1109/iedm.2007.4418898
https://doi.org/10.1109/iedm.2007.4418898