Zobrazeno 1 - 10
of 22
pro vyhledávání: '"U. Hodel"'
Autor:
Harald Gossner, Jung-Hoon Chun, M. Tiebout, Robert W. Dutton, W. Soldner, D. Schmitt-Landsiedel, Martin Streibl, C. Ito, U. Hodel
Publikováno v:
Scopus-Elsevier
The present work is focussed on the trade off between conventional RF ESD protection concepts optimized in terms of capacitive load and the frequently discussed RF ESD codesign idea with ESD protection skilfully integrated into RF circuit design. A n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d59e50a01983f3d7bf1f833b0e5b38b9
https://doi.org/10.1016/j.microrel.2006.11.007
https://doi.org/10.1016/j.microrel.2006.11.007
Publikováno v:
Physical Review B. 54:17888-17895
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a940a5041f5febb4bb3833b62cf2393d
https://doi.org/10.1103/physrevb.54.17888
https://doi.org/10.1103/physrevb.54.17888
Publikováno v:
Review of Scientific Instruments. 67:2269-2273
We describe a combined ultrahigh vacuum scanning tunneling microscope (STM)–scanning electron microscope (SEM) system, which allows to position the STM tip with respect to the sample within an area of 5 mm×5 mm under SEM control. While the SEM res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39cd9935763075bfdf5a585682ce0965
https://doi.org/10.1063/1.1147045
https://doi.org/10.1063/1.1147045
Publikováno v:
IEEE Photonics Technology Letters. 11:117-119
The optoelectronic dc and RF behaviour of an InAlAs-InGaAs optically controlled field-effect transistor based on a high electron mobility transistor layer structure is investigated at 1.3-/spl mu/m wavelength light. The device is backside-illuminated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23b7e2443136b2a5fb987c135f73f56b
https://doi.org/10.1109/68.736414
https://doi.org/10.1109/68.736414
Publikováno v:
Fresenius' Journal of Analytical Chemistry. 358:77-79
A combined ultrahigh vacuum scanning tunneling-scanning electron microscope system is presented. This system allows to approach arbitrary locations on a sample within a range of 5 mm × 5 mm under electron microscopic control. The usefulness of this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1167bff2dcfe22cd6fb3dbc1128cabd
https://doi.org/10.1007/s002160050349
https://doi.org/10.1007/s002160050349
Integration of high-performance, low-leakage and mixed signal features into a 100 nm CMOS technology
Autor:
Thomas Schafbauer, S. Sportouch, Baozhen Li, Pak Leung, Y. H. Lin, Yi-Cheng Chen, Yimin Huang, Phung T. Nguyen, Chuan Lin, Shih-Fen Huang, Ming-Tsan Lee, A. Olbrich, Philipp Riess, J. Brighten, G. Knoblinger, Andy Cowley, U. Hodel, A. Grassmann, W. Nissl, Dirk Vietzke, Kun-Chi Lin, Larry Clevenger, Kai Esmark, Robert C. Wong, Hsiang-Jen Huang, C. Wann, M. Commons, Alan J. Leslie, T. Schiml, Martin Wendel, Qiuyi Ye, Erdem Kaltalioglu, Nivo Rovedo, Alvin G. Thomas
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
Low voltage operation in sub-0.25 /spl mu/m requirements mean that the simultaneous integration of all components on a single chip - high performance, low leakage and mixed-signal components - is crucial. In this paper, we present the successful inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a1f93d57ef161cbbc8cc1ab25585ee1
https://doi.org/10.1109/vlsit.2002.1015388
https://doi.org/10.1109/vlsit.2002.1015388
Autor:
A. Fox, A. v. d. Hart, A. Orzati, Hans Lüth, Peter Kordos, O.J. Homan, Michel Marso, A. Förster, U. Hodel
Publikováno v:
Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).
We present a novel InAlAs/InGaAs layer structure for monolithically integrating MSM diodes and HEMTs into an photoreceiver. The novel layer system, grown on semiinsulating InP, consists of a typical HEMT layer sequence with an additional lattice matc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9abcd6e064765cfeaa9c6a83c7bff987
https://doi.org/10.1109/iciprm.2000.850334
https://doi.org/10.1109/iciprm.2000.850334
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:1364
The melting, eutectic alloy formation, and evaporation, induced locally by a scanning tunneling microscope, was studied for 20 nm Ag films, deposited on hydrogen-terminated Si(100) surfaces. The Ag thin film can be locally rearranged or evaporated wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::415f395aca76c0c3bc322e55015bc4b3
https://doi.org/10.1116/1.589539
https://doi.org/10.1116/1.589539
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.